Photoluminescence Quenching in Single-Layer MoS2 via Oxygen Plasma Treatment

ABSTRACTWe investigate the structural, optical and electrical properties of single-layer graphene exposed to oxygen plasma treatment. We find that the pristine semimetallic behavior of graphene disappears upon plasma treatment, in favour of the opening of a bandgap and the featuring of semiconducting properties. The metal-to-semiconductor transition observed appears to be dependent on the plasma treatment time. The semiconducting behavior is also confirmed by photoluminescence measurements. The opening of a bandgap in graphene is explained in terms of graphene surface functionalization with oxygen atoms, bonded as epoxy groups. Ab initio calculations of the density of states show more details about the oxygen–graphene interaction and its effects on the graphene optoelectronic properties, predicting no states near the Fermi level at increasing epoxy group density. The structural changes are also monitored by Raman spectroscopy, showing the progressive evolution of the sp2 character of pristine graphene to sp3, due to the lattice decoration with out-of-plane epoxy groups.

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Single Layer vs Bilayer Graphene: A Comparative Study of the Effects of Oxygen Plasma Treatment on Their Electronic and Optical Properties

The Journal of Physical Chemistry C ◽

10.1021/jp203010z ◽

2011 ◽

Vol 115 (33) ◽

pp. 16619-16624 ◽

Cited By ~ 49

Author(s):

Amirhasan Nourbakhsh ◽

Mirco Cantoro ◽

Alexander V. Klekachev ◽

Geoffrey Pourtois ◽

Tom Vosch ◽

...

Keyword(s):

Optical Properties ◽

Comparative Study ◽

Plasma Treatment ◽

Oxygen Plasma ◽

Single Layer ◽

Bilayer Graphene ◽

Oxygen Plasma Treatment ◽

Electronic And Optical Properties

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Low-temperature oxygen plasma treatment of single-layer molybdenum disulfide

Materials Research Express ◽

10.1088/2053-1591/ab0163 ◽

2019 ◽

Vol 6 (5) ◽

pp. 055007 ◽

Cited By ~ 1

Author(s):

Anthony Akayeti ◽

Weibing Zhang ◽

Xiaohong Yan ◽

Quan Wang

Keyword(s):

Low Temperature ◽

Plasma Treatment ◽

Molybdenum Disulfide ◽

Oxygen Plasma ◽

Single Layer ◽

Oxygen Plasma Treatment

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The improved piezoelectric properties of ZnO nanorods with oxygen plasma treatment on the single layer graphene coated polymer substrate (Phys. Status Solidi A 2∕2014)

physica status solidi (a) ◽

10.1002/pssa.201470210 ◽

2014 ◽

Vol 211 (2) ◽

pp. n/a-n/a

Author(s):

Mushtaque Hussain ◽

Mazhar Ali Abbasi ◽

Zafar Hussain Ibupoto ◽

Omer Nur ◽

Magnus Willander

Keyword(s):

Plasma Treatment ◽

Oxygen Plasma ◽

Piezoelectric Properties ◽

Zno Nanorods ◽

Single Layer ◽

Polymer Substrate ◽

Single Layer Graphene ◽

Oxygen Plasma Treatment ◽

Layer Graphene

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High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.347-350.1535 ◽

2013 ◽

Vol 347-350 ◽

pp. 1535-1539

Author(s):

Jian Jun Zhou ◽

Liang Li ◽

Hai Yan Lu ◽

Ceng Kong ◽

Yue Chan Kong ◽

...

Keyword(s):

Plasma Treatment ◽

Breakdown Voltage ◽

Oxygen Plasma ◽

Cutoff Frequency ◽

Chemical Vapor ◽

Current Gain ◽

Organic Chemical ◽

Oxygen Plasma Treatment ◽

Gan Hemt ◽

High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

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