First-Principles Study of p-n-Doped Silicon Quantum Dots: Charge Transfer, Energy Dissipation, and Time-Resolved Emission

2013 ◽  
Vol 4 (17) ◽  
pp. 2906-2913 ◽  
Author(s):  
Jiangchao Chen ◽  
Andrew Schmitz ◽  
Talgat Inerbaev ◽  
Qingguo Meng ◽  
Svetlana Kilina ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Charge Transfer ◽  
Energy Dissipation ◽  
First Principles ◽  
Transfer Energy ◽  
Silicon Quantum Dots ◽  
Time Resolved ◽  
First Principles Study ◽  
Charge Transfer Energy ◽  
Doped Silicon

F−-Eu3+ charge transfer energy and local crystal environment in Eu3+ doped calcium fluoride

2017 ◽  
Vol 43 (16) ◽  
pp. 13089-13093 ◽  
Author(s):  
Yu Pan ◽  
Wenjun Wang ◽  
Liqun Zhou ◽  
Haibing Xu ◽  
Qinghua Xia ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Calcium Fluoride ◽  
Transfer Energy ◽  
Charge Transfer Energy

Time-resolved and time-integrated photoluminescence analysis of state filling and quantum confinement of silicon quantum dots

2005 ◽  
Vol 97 (1) ◽  
pp. 013501 ◽  
Author(s):  
Lap Van Dao ◽  
Xiaoming Wen ◽  
My Tra Thi Do ◽  
Peter Hannaford ◽  
Eun-Chel Cho ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Confinement ◽  
Silicon Quantum Dots ◽  
Time Resolved ◽  
State Filling

Improving the charge transfer performance of Si nanomaterial through C surface modification: A first-principles study

2019 ◽  
Vol 19 (7) ◽  
pp. 817-821 ◽  
Author(s):  
Yingying Yang ◽  
Xiaowan Xue ◽  
Yuan Qin ◽  
Hao Huang ◽  
Xudong Wang ◽  
...  
Keyword(s):  
Surface Modification ◽  
Charge Transfer ◽  
First Principles ◽  
Transfer Performance ◽  
First Principles Study

A dual-responsive fluorescent sensor for Hg2+ and thiols based on N-doped silicon quantum dots and its application in cell imaging

2019 ◽  
Vol 7 (44) ◽  
pp. 7033-7041 ◽  
Author(s):  
Sansan Shen ◽  
Bohui Huang ◽  
Xiaofeng Guo ◽  
Hong Wang
Keyword(s):  
Quantum Dots ◽  
Response Time ◽  
Cell Imaging ◽  
Fluorescent Sensor ◽  
High Sensitivity ◽  
Fast Response ◽  
Silicon Quantum Dots ◽  
Fast Response Time ◽  
Dual Responsive ◽  
Doped Silicon

An on–off–on fluorescent sensor based on N-SiQD has the advantages of fast response time and high sensitivity to Hg2+ and GSH.

S doped silicon quantum dots with high quantum yield as a fluorescent sensor for determination of Fe3+ in water

2020 ◽  
Vol 110 ◽  
pp. 110461
Author(s):  
Xiaoshuo Zhang ◽  
Chunhua Li ◽  
Sheliang Zhao ◽  
Huiyun Pang ◽  
Yong Han ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Yield ◽  
Fluorescent Sensor ◽  
High Quantum Yield ◽  
Silicon Quantum Dots ◽  
High Quantum ◽  
Doped Silicon
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