Spin blockade and phonon bottleneck for hot electron relaxation observed in n-doped colloidal quantum dots

Understanding and manipulating hot electron dynamics in semiconductors may enable disruptive energy conversion schemes. Hot electrons in bulk semiconductors usually relax via electron-phonon scattering on a sub-picosecond timescale. Quantum-confined semiconductors such as quantum dots offer a unique platform to prolong hot electron lifetime through their size-tunable electronic structures. Here, we study hot electron relaxation in electron-doped (n-doped) colloidal CdSe quantum dots. For lightly-doped dots we observe a slow 1Pe hot electron relaxation (~10 picosecond) resulting from a Pauli spin blockade of the preoccupying 1Se electron. For heavily-doped dots, a large number of electrons residing in the surface states introduce picosecond Auger recombination which annihilates the valance band hole, allowing us to observe 300-picosecond-long hot electrons as a manifestation of a phonon bottleneck effect. This brings the hot electron energy loss rate to a level of sub-meV per picosecond from a usual level of 1 eV per picosecond. These results offer exciting opportunities of hot electron harvesting by exploiting carrier-carrier, carrier-phonon and spin-spin interactions in doped quantum dots.

Author Correction: Parametric dependence of hot electron relaxation timescales on electron-electron and electron-phonon interaction strengths

A correction to this paper has been published: https://doi.org/10.1038/s42005-020-00499-8

Parametric dependence of hot electron relaxation timescales on electron-electron and electron-phonon interaction strengths

Understanding how photoexcited electron dynamics depend on electron-electron (e-e) and electron-phonon (e-p) interaction strengths is important for many fields, e.g. ultrafast magnetism, photocatalysis, plasmonics, and others. Here, we report simple expressions that capture the interplay of e-e and e-p interactions on electron distribution relaxation times. We observe a dependence of the dynamics on e-e and e-p interaction strengths that is universal to most metals and is also counterintuitive. While only e-p interactions reduce the total energy stored by excited electrons, the time for energy to leave the electronic subsystem also depends on e-e interaction strengths because e-e interactions increase the number of electrons emitting phonons. The effect of e-e interactions on energy-relaxation is largest in metals with strong e-p interactions. Finally, the time high energy electron states remain occupied depends only on the strength of e-e interactions, even if e-p scattering rates are much greater than e-e scattering rates.