Silicon-on-Insulator-Based Radio Frequency Single-Electron Transistors Operating at Temperatures above 4.2 K
2002 ◽
Vol 41
(Part 1, No. 4B)
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pp. 2574-2577
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Keyword(s):
Keyword(s):
2010 ◽
Vol 87
(5-8)
◽
pp. 1643-1645
◽
Keyword(s):