Single Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire

2001 ◽  
Author(s):  
Kyung Rok Kim ◽  
Dae Hwan Kim ◽  
Suk Kang Sung ◽  
Jong Duk Lee ◽  
Byung Gook Park ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

Single-Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire

2002 ◽  
Vol 41 (Part 1, No. 4B) ◽  
pp. 2574-2577 ◽  
Author(s):  
Kyung Rok Kim ◽  
Dae Hwan Kim ◽  
Suk-Kang Sung ◽  
Jong Duk Lee ◽  
Byung-Gook Park ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

scholarly journals Silicon-on-Insulator-Based Radio Frequency Single-Electron Transistors Operating at Temperatures above 4.2 K

Nano Letters ◽  
2008 ◽  
Vol 8 (12) ◽  
pp. 4648-4652 ◽  
Author(s):  
M. Manoharan ◽  
Yoshishige Tsuchiya ◽  
Shunri Oda ◽  
Hiroshi Mizuta
Keyword(s):  
Radio Frequency ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

scholarly journals Radio-frequency single electron transistors in physically defined silicon quantum dots with a sensitive phase response

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Raisei Mizokuchi ◽  
Sinan Bugu ◽  
Masaru Hirayama ◽  
Jun Yoneda ◽  
Tetsuo Kodera
Keyword(s):  
Quantum Dots ◽  
Radio Frequency ◽  
Impedance Matching ◽  
Electrical Circuit ◽  
Phase Response ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Large Phase ◽  
Electron Transistors

AbstractRadio-frequency reflectometry techniques are instrumental for spin qubit readout in semiconductor quantum dots. However, a large phase response is difficult to achieve in practice. In this work, we report radio-frequency single electron transistors using physically defined quantum dots in silicon-on-insulator. We study quantum dots which do not have the top gate structure considered to hinder radio frequency reflectometry measurements using physically defined quantum dots. Based on the model which properly takes into account the parasitic components, we precisely determine the gate-dependent device admittance. Clear Coulomb peaks are observed in the amplitude and the phase of the reflection coefficient, with a remarkably large phase signal of ∼45°. Electrical circuit analysis indicates that it can be attributed to a good impedance matching and a detuning from the resonance frequency. We anticipate that our results will be useful in designing and simulating reflectometry circuits to optimize qubit readout sensitivity and speed.

Silicon Single-Electron Transistors and Single-Electron CCD

2001 ◽  
Vol 686 ◽  
Author(s):  
Yasuo Takahashi ◽  
Akira Fujiwara ◽  
Yukinori Ono ◽  
Hiroshi Inokawa
Keyword(s):  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Charge Coupled Device ◽  
Quantum Size ◽  
Single Electronics ◽  
In Series ◽  
Elementary Charge ◽  
Novel Method ◽  
Electron Transistors

AbstractWe have developed two types of devices for silicon-single-electronics; a single-electron transistor (SET) and a single-electron charge coupled device (CCD). Both devices were fabricated on SOI (silicon on insulator) wafers. For the SET fabrication, we used a novel method called pattern-dependent oxidation (PADOX), which exploits special phenomena that occur during thermal oxidation of a small silicon structure. The Si structures are converted into small Si SETs by consequence of stress-induced bandgap narrowing and quantum size effects. Since the size of the resultant Si island is about 10 nm, the SETs operate at relatively high temperatures. We have already developed several kinds of application of Si SETs by utilizing the special features of SETs. In addition, we have developed a single-electron CCD that enables us to manipulate a single electron without tunnel capacitors. The device utilizes small Si-wire MOSFETs connected in series, and an elementary charge can be transferred like in a CCD.

Quantum dots in single electron transistors with ultrathin silicon-on-insulator structures

2015 ◽  
Vol 107 (1) ◽  
pp. 013102 ◽  
Author(s):  
S. Ihara ◽  
A. Andreev ◽  
D. A. Williams ◽  
T. Kodera ◽  
S. Oda
Keyword(s):  
Quantum Dots ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors
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