Hydrogen silsesquioxane electron beam lithography for ultra-small single electron transistors in silicon on insulator

2010 ◽  
Vol 87 (5-8) ◽  
pp. 1643-1645 ◽  
Author(s):  
W. Daves ◽  
M. Ruoff ◽  
M. Fleischer ◽  
D.A. Wharam ◽  
D.P. Kern
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Hydrogen Silsesquioxane ◽  
Single Electron Transistors ◽  
Electron Transistors

Proximity effect of electron beam lithography on single-electron transistors

Pramana ◽  
2006 ◽  
Vol 67 (1) ◽  
pp. 57-65 ◽  
Author(s):  
Shu-Fen Hu ◽  
Kuo-Dong Huang ◽  
Yue-Min Wan ◽  
Chin-Lung Sung
Keyword(s):  
Electron Beam ◽  
Proximity Effect ◽  
Electron Beam Lithography ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

Single-Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire

2002 ◽  
Vol 41 (Part 1, No. 4B) ◽  
pp. 2574-2577 ◽  
Author(s):  
Kyung Rok Kim ◽  
Dae Hwan Kim ◽  
Suk-Kang Sung ◽  
Jong Duk Lee ◽  
Byung-Gook Park ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

Single Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire

2001 ◽  
Author(s):  
Kyung Rok Kim ◽  
Dae Hwan Kim ◽  
Suk Kang Sung ◽  
Jong Duk Lee ◽  
Byung Gook Park ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

scholarly journals Silicon-on-Insulator-Based Radio Frequency Single-Electron Transistors Operating at Temperatures above 4.2 K

Nano Letters ◽  
2008 ◽  
Vol 8 (12) ◽  
pp. 4648-4652 ◽  
Author(s):  
M. Manoharan ◽  
Yoshishige Tsuchiya ◽  
Shunri Oda ◽  
Hiroshi Mizuta
Keyword(s):  
Radio Frequency ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

scholarly journals Radio-frequency single electron transistors in physically defined silicon quantum dots with a sensitive phase response

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Raisei Mizokuchi ◽  
Sinan Bugu ◽  
Masaru Hirayama ◽  
Jun Yoneda ◽  
Tetsuo Kodera
Keyword(s):  
Quantum Dots ◽  
Radio Frequency ◽  
Impedance Matching ◽  
Electrical Circuit ◽  
Phase Response ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Large Phase ◽  
Electron Transistors

AbstractRadio-frequency reflectometry techniques are instrumental for spin qubit readout in semiconductor quantum dots. However, a large phase response is difficult to achieve in practice. In this work, we report radio-frequency single electron transistors using physically defined quantum dots in silicon-on-insulator. We study quantum dots which do not have the top gate structure considered to hinder radio frequency reflectometry measurements using physically defined quantum dots. Based on the model which properly takes into account the parasitic components, we precisely determine the gate-dependent device admittance. Clear Coulomb peaks are observed in the amplitude and the phase of the reflection coefficient, with a remarkably large phase signal of ∼45°. Electrical circuit analysis indicates that it can be attributed to a good impedance matching and a detuning from the resonance frequency. We anticipate that our results will be useful in designing and simulating reflectometry circuits to optimize qubit readout sensitivity and speed.

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