Magnetoelectric Assisted 180° Magnetization Switching for Electric Field Addressable Writing in Magnetoresistive Random-Access Memory

ACS Nano ◽  
2014 ◽  
Vol 8 (8) ◽  
pp. 7793-7800 ◽  
Author(s):  
Zhiguang Wang ◽  
Yue Zhang ◽  
Yaojin Wang ◽  
Yanxi Li ◽  
Haosu Luo ◽  
...  
Keyword(s):  
Electric Field ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Magnetization Switching ◽  
Magnetoresistive Random Access Memory

Spin-transfer-torque magnetoresistive random-access memory (STT-MRAM) technology

2019 ◽  
pp. 237-281 ◽  
Author(s):  
T. Hanyu ◽  
T. Endoh ◽  
Y. Ando ◽  
S. Ikeda ◽  
S. Fukami ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Access Memory ◽  
Magnetoresistive Random Access Memory

Advanced graphene recording device for spin–orbit torque magnetoresistive random access memory

2020 ◽  
Vol 31 (16) ◽  
pp. 165201 ◽  
Author(s):  
A A Rybkina ◽  
A G Rybkin ◽  
I I Klimovskikh ◽  
P N Skirdkov ◽  
K A Zvezdin ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Recording Device ◽  
Spin Orbit ◽  
Access Memory ◽  
Magnetoresistive Random Access Memory

Thermally activated magnetization reversal in submicron magnetic tunnel junctions for magnetoresistive random access memory

2002 ◽  
Vol 80 (13) ◽  
pp. 2335-2337 ◽  
Author(s):  
N. D. Rizzo ◽  
M. DeHerrera ◽  
J. Janesky ◽  
B. Engel ◽  
J. Slaughter ◽  
...  
Keyword(s):  
Magnetization Reversal ◽  
Tunnel Junctions ◽  
Random Access ◽  
Magnetic Tunnel Junctions ◽  
Random Access Memory ◽  
Access Memory ◽  
Thermally Activated ◽  
Magnetoresistive Random Access Memory

Magnetoresistive random access memory operation error by thermally activated reversal (invited)

2005 ◽  
Vol 97 (10) ◽  
pp. 10P503 ◽  
Author(s):  
Tetsuya Yamamoto ◽  
Hiroshi Kano ◽  
Yutaka Higo ◽  
Kazuhiro Ohba ◽  
Tetsuya Mizuguchi ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Thermally Activated ◽  
Magnetoresistive Random Access Memory

scholarly journals Write Error Rate and Read Disturbance in Electric-Field-Controlled Magnetic Random-Access Memory

2017 ◽  
Vol 8 ◽  
pp. 1-5 ◽  
Author(s):  
Cecile Grezes ◽  
Hochul Lee ◽  
Albert Lee ◽  
Shaodi Wang ◽  
Farbod Ebrahimi ◽  
...  
Keyword(s):  
Electric Field ◽  
Error Rate ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Magnetic Random Access Memory
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