Advances in Non-Volatile Memory and Storage Technology
Latest Publications

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20

(FIVE YEARS 20)

H-INDEX

3

(FIVE YEARS 3)

Published By Elsevier

9780081025840

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Copyright

Advances in Non-Volatile Memory and Storage Technology ◽

10.1016/b978-0-08-102584-0.09994-0 ◽

2019 ◽

pp. iv

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Spin-orbit torque magnetoresistive random-access memory (SOT-MRAM)

Advances in Non-Volatile Memory and Storage Technology ◽

10.1016/b978-0-08-102584-0.00007-3 ◽

2019 ◽

pp. 203-235 ◽

Author(s):

Chong Bi ◽

Noriyuki Sato ◽

Shan X. Wang

Keyword(s):

Random Access ◽

Random Access Memory ◽

Access Memory ◽

Magnetoresistive Random Access Memory

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Advances in nanowire PCM

Advances in Non-Volatile Memory and Storage Technology ◽

10.1016/b978-0-08-102584-0.00013-9 ◽

2019 ◽

pp. 443-518

Author(s):

Massimo Longo

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Spin-transfer-torque magnetoresistive random-access memory (STT-MRAM) technology

Advances in Non-Volatile Memory and Storage Technology ◽

10.1016/b978-0-08-102584-0.00008-5 ◽

2019 ◽

pp. 237-281 ◽

Author(s):

T. Hanyu ◽

T. Endoh ◽

Y. Ando ◽

S. Ikeda ◽

S. Fukami ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Spin Transfer Torque ◽

Spin Transfer ◽

Access Memory ◽

Magnetoresistive Random Access Memory

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OxRAM technology development and performances

Advances in Non-Volatile Memory and Storage Technology ◽

10.1016/b978-0-08-102584-0.00001-2 ◽

2019 ◽

pp. 3-33 ◽

Author(s):

Ludovic Goux

Keyword(s):

Technology Development

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3D-NAND Flash memory and technology

Advances in Non-Volatile Memory and Storage Technology ◽

10.1016/b978-0-08-102584-0.00009-7 ◽

2019 ◽

pp. 283-319

Author(s):

R. Shirota

Keyword(s):

Flash Memory ◽

Nand Flash Memory

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Index

Advances in Non-Volatile Memory and Storage Technology ◽

10.1016/b978-0-08-102584-0.09991-5 ◽

2019 ◽

pp. 633-648

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Neuromorphic computing with resistive switching memory devices

Advances in Non-Volatile Memory and Storage Technology ◽

10.1016/b978-0-08-102584-0.00017-6 ◽

2019 ◽

pp. 603-631 ◽

Author(s):

Daniele Ielmini ◽

Stefano Ambrogio

Keyword(s):

Resistive Switching ◽

Memory Devices ◽

Neuromorphic Computing ◽

Resistive Switching Memory ◽

Switching Memory

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Interface effects on memristive devices

Advances in Non-Volatile Memory and Storage Technology ◽

10.1016/b978-0-08-102584-0.00006-1 ◽

2019 ◽

pp. 171-202 ◽

Author(s):

Susanne Hoffmann-Eifert ◽

Regina Dittmann

Keyword(s):

Interface Effects

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Front Matter

Advances in Non-Volatile Memory and Storage Technology ◽

10.1016/b978-0-08-102584-0.09989-7 ◽

2019 ◽

pp. i-ii

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