2009 IEEE International Integrated Reliability Workshop Final Report
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9781424439218

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2009 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2009.5383047 ◽

2009 ◽

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Covers

2009 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2009.5383049 ◽

2009 ◽

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Electric field dependent switching and degradation of Resistance Random Access Memory

2009 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2009.5383041 ◽

2009 ◽

Cited By ~ 1

Author(s):

Keiji Hosotani ◽

Seong-Geon Park ◽

Yoshio Nishi

Keyword(s):

Electric Field ◽

Random Access ◽

Random Access Memory ◽

Access Memory ◽

Resistance Random Access Memory ◽

Field Dependent

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fWLR supported process development based on V- and J-ramp stress tests

2009 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2009.5383012 ◽

2009 ◽

Cited By ~ 1

Author(s):

A. Aal

Keyword(s):

Process Development ◽

Stress Tests

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The use of Taguchi method for process design of experiment to resolve gate oxide integrity issue

2009 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2009.5383016 ◽

2009 ◽

Cited By ~ 1

Author(s):

Tommy Cahyadi ◽

Pee-Ya Tan ◽

Mien-Ta Ng ◽

Tammi Yeo ◽

Juat-Jong Boh ◽

...

Keyword(s):

Taguchi Method ◽

Design Of Experiment ◽

Process Design ◽

Gate Oxide ◽

Integrity Issue ◽

Gate Oxide Integrity

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Investigation of SILC via Energy Resolved spin dependent tunneling spectroscopy

2009 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2009.5383043 ◽

2009 ◽

Author(s):

J.T. Ryan ◽

P.M. Lenahan ◽

A.T. Krishnan ◽

S. Krishnan

Keyword(s):

Tunneling Spectroscopy

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Correlation of electrical properties with interface structures of CVD oxide-based oxynitride tunnel dielectrics

2009 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2009.5383009 ◽

2009 ◽

Author(s):

Ziyuan Liu ◽

Hirokazu Ishigaki ◽

Shuu Ito ◽

Takashi Ide ◽

Mariko Makabe ◽

...

Keyword(s):

Electrical Properties ◽

Interface Structures

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Improvement on erase characteristics of SONOS flash memory by bandgap engineering of tunnel oxide

2009 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2009.5383011 ◽

2009 ◽

Cited By ~ 1

Author(s):

Dong Hua Li ◽

Byung-Gook Park

Keyword(s):

Flash Memory ◽

Bandgap Engineering

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Discussion group (DG) summary: NBTI

2009 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2009.5383002 ◽

2009 ◽

Cited By ~ 1

Author(s):

Jason Campbell

Keyword(s):

Discussion Group

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The critical role of the defect structural relaxation for interpretation of noise measurements in MOSFETs

2009 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2009.5383021 ◽

2009 ◽

Cited By ~ 4

Author(s):

D. Veksler ◽

G. Bersuker ◽

H. Park ◽

C. Young ◽

K. Y. Lim ◽

...

Keyword(s):

Structural Relaxation ◽

Critical Role ◽

Noise Measurements

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2009 IEEE International Integrated Reliability Workshop Final Report
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Contents

Covers

Electric field dependent switching and degradation of Resistance Random Access Memory

fWLR supported process development based on V- and J-ramp stress tests

The use of Taguchi method for process design of experiment to resolve gate oxide integrity issue

Investigation of SILC via Energy Resolved spin dependent tunneling spectroscopy

Correlation of electrical properties with interface structures of CVD oxide-based oxynitride tunnel dielectrics

Improvement on erase characteristics of SONOS flash memory by bandgap engineering of tunnel oxide

Discussion group (DG) summary: NBTI

The critical role of the defect structural relaxation for interpretation of noise measurements in MOSFETs

Export Citation Format

2009 IEEE International Integrated Reliability Workshop Final ReportLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Contents

Covers

Electric field dependent switching and degradation of Resistance Random Access Memory

fWLR supported process development based on V- and J-ramp stress tests

The use of Taguchi method for process design of experiment to resolve gate oxide integrity issue

Investigation of SILC via Energy Resolved spin dependent tunneling spectroscopy

Correlation of electrical properties with interface structures of CVD oxide-based oxynitride tunnel dielectrics

Improvement on erase characteristics of SONOS flash memory by bandgap engineering of tunnel oxide

Discussion group (DG) summary: NBTI

The critical role of the defect structural relaxation for interpretation of noise measurements in MOSFETs

2009 IEEE International Integrated Reliability Workshop Final Report
Latest Publications