High-order replica bands in monolayer FeSe/SrTiO3 revealed by polarization-dependent photoemission spectroscopy

AbstractThe mechanism of the enhanced superconductivity in monolayer FeSe/SrTiO3 has been enthusiastically studied and debated over the past decade. One specific observation has been taken to be of central importance: the replica bands in the photoemission spectrum. Although suggestive of electron-phonon interaction in the material, the essence of these spectroscopic features remains highly controversial. In this work, we conduct angle-resolved photoemission spectroscopy measurements on monolayer FeSe/SrTiO3 using linearly polarized photons. This configuration enables unambiguous characterization of the valence electronic structure with a suppression of the spectral background. We consistently observe high-order replica bands derived from various Fe 3d bands, similar to those observed on bare SrTiO3. The intensity of the replica bands is unexpectedly high and different between dxy and dyz bands. Our results provide new insights on the electronic structure of this high-temperature superconductor and the physical origin of the photoemission replica bands.

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The electronic structure of epitaxial graphene—A view from angle-resolved photoemission spectroscopy

10.1093/oxfordhb/9780199533046.013.14 ◽

2017 ◽

Author(s):

S.Y. Zhou ◽

A. Lanzara

Keyword(s):

Electronic Structure ◽

Quantum Confinement ◽

Single Layer ◽

Epitaxial Graphene ◽

Photoemission Spectroscopy ◽

Angle Resolved Photoemission Spectroscopy ◽

Substrate Interaction ◽

Conduction Bands ◽

Gap Opening

This article analyzes the electronic structure of epitaxial graphene using angle-resolved photoemission spectroscopy (ARPES). It first describes how the carbon atoms in graphene are arranged before discussing the growth and characterization of graphene samples. It then considers the electronic structure of epitaxial graphene, along with the gap opening in single-layer epitaxial graphene. It also examines possible mechanisms for the gap opening in graphene, including quantum confinement, mixing of the states between the Brillouin zone corner K points induced by scattering, and hybridization of the valence and conduction bands caused by symmetry breaking in carbon sublattices. Clear deviations from the conical dispersions are observed near the Diracpoint energy, which can be interpreted as a gap opening attributed to graphene–substrate interaction. Graphene–substrate interaction is thus a promising route for engineering the bandgap in graphene.

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Electronic Structure of theYH3Phase from Angle-Resolved Photoemission Spectroscopy

Physical Review Letters ◽

10.1103/physrevlett.90.196804 ◽

2003 ◽

Vol 90 (19) ◽

Cited By ~ 15

Author(s):

J. Hayoz ◽

C. Koitzsch ◽

M. Bovet ◽

D. Naumović ◽

L. Schlapbach ◽

...

Keyword(s):

Electronic Structure ◽

Photoemission Spectroscopy ◽

Angle Resolved Photoemission Spectroscopy

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Angle-resolved photoemission spectroscopy of the low-energy electronic structure of superconducting Pr2CuO4 driven by oxygen nonstoichiometry

Physical Review B ◽

10.1103/physrevb.98.020505 ◽

2018 ◽

Vol 98 (2) ◽

Cited By ~ 7

Author(s):

M. Horio ◽

Y. Krockenberger ◽

K. Koshiishi ◽

S. Nakata ◽

K. Hagiwara ◽

...

Keyword(s):

Electronic Structure ◽

Oxygen Nonstoichiometry ◽

Low Energy ◽

Photoemission Spectroscopy ◽

Angle Resolved Photoemission Spectroscopy

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Electronic structure ofBaNi2P2observed by angle-resolved photoemission spectroscopy

Physical Review B ◽

10.1103/physrevb.89.195138 ◽

2014 ◽

Vol 89 (19) ◽

Cited By ~ 11

Author(s):

S. Ideta ◽

T. Yoshida ◽

M. Nakajima ◽

W. Malaeb ◽

H. Kito ◽

...

Keyword(s):

Electronic Structure ◽

Photoemission Spectroscopy ◽

Angle Resolved Photoemission Spectroscopy

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Growth and Characterization of the Binary Defect Alloy Cu2-xSe and the Relation to II–VI/I–III–VI Heterojunction Formation

MRS Proceedings ◽

10.1557/proc-378-249 ◽

1995 ◽

Vol 378 ◽

Cited By ~ 1

Author(s):

Art J. Nelson ◽

K. Sinha ◽

John Moreland

Keyword(s):

Electronic Structure ◽

Valence Band ◽

Photoemission Spectroscopy ◽

Interfacial Chemistry ◽

Valence Band Offset ◽

Force Microscopy ◽

Atomic Force ◽

Valence Band Discontinuity

AbstractSynchrotron radiation soft x-ray photoemission spectroscopy was used to investigate the development of the electronic structure at the CdS/Cu2Se heterojunction interface. Cu2−xSe layers were deposited on GaAs (100) by molecular beam epitaxy from Cu2Se sources. Raman spectra reveal a strong peak at 270 cm−1, indicative of the Cu2−xSe phase. Atomic force microscopy reveals uniaxial growth in a preferred (100) orientation. CdS overlayers were then deposited in-situ, at room temperature, in steps on these epilayers. Photoemission measurements were acquired after each growth in order to observe changes in the valence band electronic structure as well as changes in the Se3d and Cd4d core lines. The results were used to correlate the interfacial chemistry with the electronic structure and to directly determine the CdS/Cu2−xSe and heterojunction valence band discontinuity and the consequent heterojunction band diagram. These results are compared to the valence band offset (ΔEv) for the CdS/CuInSe2 heterojunction interface.

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