The electronic structure of epitaxial graphene—A view from angle-resolved photoemission spectroscopy

Author(s):  
S.Y. Zhou ◽  
A. Lanzara

This article analyzes the electronic structure of epitaxial graphene using angle-resolved photoemission spectroscopy (ARPES). It first describes how the carbon atoms in graphene are arranged before discussing the growth and characterization of graphene samples. It then considers the electronic structure of epitaxial graphene, along with the gap opening in single-layer epitaxial graphene. It also examines possible mechanisms for the gap opening in graphene, including quantum confinement, mixing of the states between the Brillouin zone corner K points induced by scattering, and hybridization of the valence and conduction bands caused by symmetry breaking in carbon sublattices. Clear deviations from the conical dispersions are observed near the Diracpoint energy, which can be interpreted as a gap opening attributed to graphene–substrate interaction. Graphene–substrate interaction is thus a promising route for engineering the bandgap in graphene.

2000 ◽  
Vol 14 (29n31) ◽  
pp. 3602-3609
Author(s):  
T. Mizokawa ◽  
A. Ino ◽  
T. Yoshida ◽  
A. Fujimori ◽  
C. Kim ◽  
...  

We have studied the electronic structure of the stripe phase in La 2-x Sr x CuO 4 (LSCO) and the Cu-O chains in PrBa 2 Cu 3 O 7 (Pr123) and PrBa 2 Cu 4 O 8 (Pr124) using angle-resolved photoemission spectroscopy (ARPES). In LSCO with x=0.12, the spectral feature near the Fermi level (EF) is almost flat from (π, 0) to (π, π/4), namely, along the stripe direction in LSCO. While the 1/4-filled chain in Pr123 has a band gap because of charge ordering, the metallic chain in Pr124 shows a dispersive feature which reaches EF at ~(π, π/4) and a flat feature near EF which is similar to that observed in the stripe phase of LSCO. Although Pr124 shows spectral-weight suppression near EF due to the instability toward charge ordering, the suppression is imperfect and Pr124 has a substantial spectral weight at EF probably due to the chain-chain coupling. This is in sharp contrast to LSCO with the perfect gap opening near (π, π/4). The difference between the stripe phase in LSCO and the coupled chains of Pr124 would be derived from the interaction between the stripe and the neighboring Cu spins which suppresses the charge ordering along the stripe.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Chong Liu ◽  
Ryan P. Day ◽  
Fengmiao Li ◽  
Ryan L. Roemer ◽  
Sergey Zhdanovich ◽  
...  

AbstractThe mechanism of the enhanced superconductivity in monolayer FeSe/SrTiO3 has been enthusiastically studied and debated over the past decade. One specific observation has been taken to be of central importance: the replica bands in the photoemission spectrum. Although suggestive of electron-phonon interaction in the material, the essence of these spectroscopic features remains highly controversial. In this work, we conduct angle-resolved photoemission spectroscopy measurements on monolayer FeSe/SrTiO3 using linearly polarized photons. This configuration enables unambiguous characterization of the valence electronic structure with a suppression of the spectral background. We consistently observe high-order replica bands derived from various Fe 3d bands, similar to those observed on bare SrTiO3. The intensity of the replica bands is unexpectedly high and different between dxy and dyz bands. Our results provide new insights on the electronic structure of this high-temperature superconductor and the physical origin of the photoemission replica bands.


2003 ◽  
Vol 90 (19) ◽  
Author(s):  
J. Hayoz ◽  
C. Koitzsch ◽  
M. Bovet ◽  
D. Naumović ◽  
L. Schlapbach ◽  
...  

2014 ◽  
Vol 89 (19) ◽  
Author(s):  
S. Ideta ◽  
T. Yoshida ◽  
M. Nakajima ◽  
W. Malaeb ◽  
H. Kito ◽  
...  

1995 ◽  
Vol 378 ◽  
Author(s):  
Art J. Nelson ◽  
K. Sinha ◽  
John Moreland

AbstractSynchrotron radiation soft x-ray photoemission spectroscopy was used to investigate the development of the electronic structure at the CdS/Cu2Se heterojunction interface. Cu2−xSe layers were deposited on GaAs (100) by molecular beam epitaxy from Cu2Se sources. Raman spectra reveal a strong peak at 270 cm−1, indicative of the Cu2−xSe phase. Atomic force microscopy reveals uniaxial growth in a preferred (100) orientation. CdS overlayers were then deposited in-situ, at room temperature, in steps on these epilayers. Photoemission measurements were acquired after each growth in order to observe changes in the valence band electronic structure as well as changes in the Se3d and Cd4d core lines. The results were used to correlate the interfacial chemistry with the electronic structure and to directly determine the CdS/Cu2−xSe and heterojunction valence band discontinuity and the consequent heterojunction band diagram. These results are compared to the valence band offset (ΔEv) for the CdS/CuInSe2 heterojunction interface.


2019 ◽  
Vol 88 (8) ◽  
pp. 084701
Author(s):  
Toru Adachi ◽  
Shinichiro Ideta ◽  
Zi How Tin ◽  
Hidetomo Usui ◽  
Kiyohisa Tanaka ◽  
...  

2009 ◽  
Vol 79 (15) ◽  
Author(s):  
J. Fink ◽  
S. Thirupathaiah ◽  
R. Ovsyannikov ◽  
H. A. Dürr ◽  
R. Follath ◽  
...  

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