scholarly journals High quality self-separated GaN crystal grown on a novel nanoporous template by HVPE

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Qin Huo ◽  
Yongliang Shao ◽  
Yongzhong Wu ◽  
Baoguo Zhang ◽  
Haixiao Hu ◽  
...  
Keyword(s):  
High Quality ◽  
Nanoporous Template ◽  
Gan Crystal

Supersonic Jet Epitaxy: An Improved Method for Nitride Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
Peter E. Norris ◽  
Long D. Zhu ◽  
H. Paul Maruska ◽  
Wilson HO ◽  
Scott Ustin ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Microwave Plasma ◽  
Supersonic Jet ◽  
Plasma Source ◽  
Improved Method ◽  
High Quality ◽  
Carrier Gas ◽  
Sapphire Substrates ◽  
Supersonic Jet Epitaxy ◽  
Gan Crystal

ABSTRACTGaN was grown by supersonic jet epitaxy(SSJE), seeding triethylgallium in helium carrier gas. Activated nitrogen was supplied by a microwave plasma source. Single crystalline GaN films were deposited on the Si-face 6H-SiC and the c-plane sapphire substrates at 600–670°C. A cubic SiC buffer layer was grown onSi(111) at 800°C by SSJE using dichlorosilane, acetylene, and a high quality GaN crystal was grown on this template at 630°C. The materials high quality was proved by hard rectifying characteristics of a diode with an N-GaN/β-SiC/P-Si(111) structure.

High-Quality GaN Crystal Growth Using Flux-Film-Coated LPE with Na Flux

2020 ◽  
Vol 55 (8) ◽  
pp. 2000042
Author(s):  
Yelim Song ◽  
Fumio Kawamura ◽  
Takashi Taniguchi ◽  
Kiyoshi Shimamura ◽  
Naoki Ohashi
Keyword(s):  
Crystal Growth ◽  
High Quality ◽  
Gan Crystal

MOVPE homoepitaxy of high-quality GaN: Crystal growth and devices

2000 ◽  
Vol 41 (1-4) ◽  
pp. 57-83 ◽  
Author(s):  
C. Kirchner ◽  
V. Schwegler ◽  
F. Eberhard ◽  
M. Kamp ◽  
K.J. Ebeling ◽  
...  
Keyword(s):  
Crystal Growth ◽  
High Quality ◽  
Gan Crystal

Growth of high-quality large GaN crystal by Na flux LPE method

2009 ◽  
Author(s):  
F. Kawamura ◽  
M. Imade ◽  
M. Yoshimura ◽  
Y. Mori ◽  
Y. Kitaoka ◽  
...  
Keyword(s):  
High Quality ◽  
Gan Crystal

The effects of surface treatments of the substrates on high-quality GaN crystal growth

2013 ◽  
Vol 372 ◽  
pp. 73-77 ◽  
Author(s):  
Taku Fujimori ◽  
Mihoko Maruyama ◽  
Masatomo Honjo ◽  
Hideo Takazawa ◽  
Kosuke Murakami ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Surface Treatments ◽  
High Quality ◽  
Gan Crystal

Growth and strain characterization of high quality GaN crystal by HVPE

2012 ◽  
Vol 350 (1) ◽  
pp. 44-49 ◽  
Author(s):  
Huiyuan Geng ◽  
Haruo Sunakawa ◽  
Norihiko Sumi ◽  
Kazutomi Yamamoto ◽  
A. Atsushi Yamaguchi ◽  
...  
Keyword(s):  
High Quality ◽  
Strain Characterization ◽  
Gan Crystal

High quality GaN crystal grown by hydride vapor-phase epitaxy on SCAATTM

2020 ◽  
Vol 13 (8) ◽  
pp. 085508
Author(s):  
Kenji Iso ◽  
Hirotaka Ikeda ◽  
Tae Mochizuki ◽  
Yutaka Mikawa ◽  
Satoru Izumisawa
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality ◽  
Gan Crystal

High‐Quality GaN Crystal Grown on Laser Decomposed GaN–Sapphire Substrate and Its Application in Photodetector

2020 ◽  
Vol 217 (20) ◽  
pp. 2000380
Author(s):  
Haixiao Hu ◽  
Baoguo Zhang ◽  
Yongzhong Wu ◽  
Yongliang Shao ◽  
Lei Liu ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
High Quality ◽  
Gan Crystal
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