scholarly journals Bidirectional propagation of tilting domain walls in perpendicularly magnetized T shaped structure with the interfacial Dzyaloshinskii-Moriya interaction

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Jaesuk Kwon ◽  
Hee-Kyeong Hwang ◽  
Jung-Il Hong ◽  
Chun-Yeol You
Keyword(s):  
Domain Walls ◽  
Bidirectional Propagation ◽  
Moriya Interaction

The effect of Dzyaloshinskii–Moriya interaction on direct and backward transition between magnetic states of Pt/Co/Ir/Co/Pr synthetic ferrimagnet

2021 ◽  
Vol 6 (3) ◽  
pp. 167-178
Author(s):  
Artem D. Talantsev ◽  
Ekaterina I. Kunitsyna ◽  
Roman B. Morgunov
Keyword(s):  
Thin Layer ◽  
Domain Structure ◽  
Magnetization Reversal ◽  
Domain Walls ◽  
Ferromagnetic Layers ◽  
Magneto Optical Kerr Effect ◽  
Magnetic States ◽  
Fluctuation Fields ◽  
Moriya Interaction ◽  
Effect Technique

In this paper, we present the study of domain structure accompanying interstate transitions in Pt/Co/Ir/Co/Pr synthetic ferrimagnet (SF) of 1.1 nm thick and 0.6 – 1.0 nm thin ferromagnetic Co layers. Variation in the thickness of the thin layer causes noticeable changes in the domain structure and mechanism of magnetization reversal revealed by MOKE (Magneto-Optical Kerr Effect) technique. Magnetization reversal includes coherent rotation of magnetization of the ferromagnetic layers, generation of magnetic nuclei, spreading of domain walls (DW), and development of areas similar with strip domains, dependently on thickness of the thin layer. Inequivalence of the direct and backward transitions between magnetic states of SF with parallel and antiparallel magnetizations was observed in sample with thin layer thicknesses 0.8 nm and 1.0 nm. Asymmetry of the transition between these states is expressed in difference fluctuation fields and shapes of reversal magnetization nucleus contributing to the correspondent forward and backward transitions. We proposed simple model based on asymmetry of Dzyaloshinskii–Moriya interaction. This model explains competition between nucleation and domain wall propagation due to increase/decrease of the DW energy dependently on direction of the spin rotation into the DW in respect to external field.

Proposal for quantifying the Dzyaloshinsky–Moriya interaction by domain walls annihilation measurement

2014 ◽  
Vol 53 (10) ◽  
pp. 108001 ◽  
Author(s):  
Ryo Hiramatsu ◽  
Kab-Jin Kim ◽  
Yoshinobu Nakatani ◽  
Takahiro Moriyama ◽  
Teruo Ono
Keyword(s):  
Domain Walls ◽  
Moriya Interaction

scholarly journals Valley-polarized domain wall magnons in 2D ferromagnetic bilayers

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Doried Ghader
Keyword(s):  
Domain Wall ◽  
Domain Walls ◽  
Ballistic Transport ◽  
The Other ◽  
Polarized Electrons ◽  
Technological Field ◽  
Electrostatic Doping ◽  
Layer Stacking ◽  
Theoretical Results ◽  
Moriya Interaction

Abstract Valleytronics is a pioneering technological field relying on the valley degree of freedom to achieve novel electronic functionalities. Topological valley-polarized electrons confined to domain walls in bilayer graphene were extensively studied in view of their potentials in valleytronics. Here, we study the magnonic version of domain wall excitations in 2D honeycomb ferromagnetic bilayers (FBL) with collinear order. In particular, we explore the implications of Dzyaloshinskii-Moriya interaction (DMI) and electrostatic doping (ED) on the existence and characteristics of 1D magnons confined to layer stacking domain walls in FBL. The coexistence of DMI and ED is found to enrich the topology in FBL, yet the corresponding domain wall magnons do not carry a well-defined valley index. On the other hand, we show that layer stacking domain walls in DMI-free FBL constitute 1D channels for ballistic transport of topological valley-polarized magnons. Our theoretical results raise hope towards magnon valleytronic devices based on atomically thin topological magnetic materials.

scholarly journals Domain structure of ultrathin ferromagnetic elements in the presence of Dzyaloshinskii–Moriya interaction

2017 ◽  
Vol 473 (2197) ◽  
pp. 20160666 ◽  
Author(s):  
Cyrill B. Muratov ◽  
Valeriy V. Slastikov
Keyword(s):  
Domain Walls ◽  
Magnetocrystalline Anisotropy ◽  
Energy Functional ◽  
Multilayer Nanostructures ◽  
Interfacial Effects ◽  
One Dimensional ◽  
Modelling Framework ◽  
Lateral Extent ◽  
The One ◽  
Moriya Interaction

Recent advances in nanofabrication make it possible to produce multilayer nanostructures composed of ultrathin film materials with thickness down to a few monolayers of atoms and lateral extent of several tens of nanometers. At these scales, ferromagnetic materials begin to exhibit unusual properties, such as perpendicular magnetocrystalline anisotropy and antisymmetric exchange, also referred to as Dzyaloshinskii–Moriya interaction (DMI), because of the increased importance of interfacial effects. The presence of surface DMI has been demonstrated to fundamentally alter the structure of domain walls. Here we use the micromagnetic modelling framework to analyse the existence and structure of chiral domain walls, viewed as minimizers of a suitable micromagnetic energy functional. We explicitly construct the minimizers in the one-dimensional setting, both for the interior and edge walls, for a broad range of parameters. We then use the methods of Γ -convergence to analyse the asymptotics of the two-dimensional magnetization patterns in samples of large spatial extent in the presence of weak applied magnetic fields.

Chirally coupled nanomagnets

Science ◽  
2019 ◽  
Vol 363 (6434) ◽  
pp. 1435-1439 ◽  
Author(s):  
Zhaochu Luo ◽  
Trong Phuong Dao ◽  
Aleš Hrabec ◽  
Jaianth Vijayakumar ◽  
Armin Kleibert ◽  
...  
Keyword(s):  
Exchange Bias ◽  
Domain Walls ◽  
Logic Gates ◽  
Bias Field ◽  
Electric Control ◽  
Nonvolatile Memories ◽  
Magnetic Layers ◽  
Out Of Plane ◽  
Free Current ◽  
Moriya Interaction

Magnetically coupled nanomagnets have multiple applications in nonvolatile memories, logic gates, and sensors. The most effective couplings have been found to occur between the magnetic layers in a vertical stack. We achieved strong coupling of laterally adjacent nanomagnets using the interfacial Dzyaloshinskii-Moriya interaction. This coupling is mediated by chiral domain walls between out-of-plane and in-plane magnetic regions and dominates the behavior of nanomagnets below a critical size. We used this concept to realize lateral exchange bias, field-free current-induced switching between multistate magnetic configurations as well as synthetic antiferromagnets, skyrmions, and artificial spin ices covering a broad range of length scales and topologies. Our work provides a platform to design arrays of correlated nanomagnets and to achieve all-electric control of planar logic gates and memory devices.

Intrinsic asymmetry in chiral domain walls due to the Dzyaloshinskii–Moriya interaction

2016 ◽  
Vol 9 (5) ◽  
pp. 053001 ◽  
Author(s):  
Dae-Yun Kim ◽  
Duck-Ho Kim ◽  
Sug-Bong Choe
Keyword(s):  
Domain Walls ◽  
Moriya Interaction
Sign in / Sign up

Export Citation Format

Share Document