scholarly journals Valley-polarized domain wall magnons in 2D ferromagnetic bilayers

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Doried Ghader
Keyword(s):  
Domain Wall ◽  
Domain Walls ◽  
Ballistic Transport ◽  
The Other ◽  
Polarized Electrons ◽  
Technological Field ◽  
Electrostatic Doping ◽  
Layer Stacking ◽  
Theoretical Results ◽  
Moriya Interaction

Abstract Valleytronics is a pioneering technological field relying on the valley degree of freedom to achieve novel electronic functionalities. Topological valley-polarized electrons confined to domain walls in bilayer graphene were extensively studied in view of their potentials in valleytronics. Here, we study the magnonic version of domain wall excitations in 2D honeycomb ferromagnetic bilayers (FBL) with collinear order. In particular, we explore the implications of Dzyaloshinskii-Moriya interaction (DMI) and electrostatic doping (ED) on the existence and characteristics of 1D magnons confined to layer stacking domain walls in FBL. The coexistence of DMI and ED is found to enrich the topology in FBL, yet the corresponding domain wall magnons do not carry a well-defined valley index. On the other hand, we show that layer stacking domain walls in DMI-free FBL constitute 1D channels for ballistic transport of topological valley-polarized magnons. Our theoretical results raise hope towards magnon valleytronic devices based on atomically thin topological magnetic materials.

Luminescence and Raman Based Real Time Imaging of Ferroelectric Domain Walls

2006 ◽  
Vol 966 ◽  
Author(s):  
Volkmar Dierolf ◽  
Pavel Capek ◽  
Christian Sandmann
Keyword(s):  
Raman Spectroscopy ◽  
Domain Wall ◽  
Real Time ◽  
Electric Fields ◽  
Domain Walls ◽  
Ferroelectric Domain ◽  
Rare Earth Ions ◽  
The Other ◽  
Current Status ◽  
Sensitive Tool

ABSTRACTWe studied ferroelectric domain wall regions in lithium niobate using the photoluminescence of intentionally doped rare earth ions (such as Er3+) as well as Raman spectroscopy and present an overview of the current status of our ongoing investigations. We find that the Er emission is a sensitive tool to observe changes in local electric fields as well as reconfiguration of defect dipoles across the domain wall. The Raman spectra, on the other hand can be used to identify charges that accumulate asymmetrically across a domain wall. We further demonstrate that the imaging methods offer sufficient sensitivity to observe the changes associated with a domain in real time while it is moving.

Interaction between Domain Walls and Point Defects in Tetragonal BaTiO3

1986 ◽  
Vol 82 ◽  
Author(s):  
O. Boser ◽  
D. N. Beshers
Keyword(s):  
Dielectric Constant ◽  
Domain Wall ◽  
Point Defects ◽  
Elastic Constants ◽  
Domain Walls ◽  
Ferroelectric Materials ◽  
The Other ◽  
Interaction Forces ◽  
Elastic Dipole ◽  
Magnetic Case

ABSTRACTDopants in ferroelectric materials affect the dielectric constant and the shape of the hysteresis loop. To understand and quantify these effects it is necessary to calculate the interaction between dopant and domain wall. In the following the dopant ion is modelled as an elastic dipole. The stresses surrounding a 180° domain wall are calculated in analogy to calculations in the magnetic case for Bloch walls. It is assumed that electrostrictive effects control the strains and that the spontaneous polarization does not rotate but decreases to zero at the center of the domain wall and increases in the opposite direction on the other side of the domain wall. The calculations are made assumingisotropic elastic constants. It is found that only elastic dipoles oriented in the planeof the domain wall interact with it. The interaction forces as a function of perpendicular distance between wall and dipole show an antisymmetric characteristic.

scholarly journals Magnetic Domain Walls Moving in Curved Permalloy Nanowires under Continuous and Pulsed Fields

2021 ◽  
Vol 31 (3) ◽  
Author(s):  
Quang Duc Hoang ◽  
Huu Xuan Cao ◽  
Thuong Hoai Nguyen ◽  
Ai Vinh Dao
Keyword(s):  
Domain Wall ◽  
Domain Walls ◽  
Dynamic Properties ◽  
Magnetic Domain ◽  
Logic Gates ◽  
The Other ◽  
Potential Well ◽  
Magnetic Domain Walls ◽  
Local Defects ◽  
Pulsed Fields

Magnetic domain walls created and propagated in curved permally nanowires under continuous and pulsed fields in a Lorentz microscope. Using such nanowires aims to create a single or multiple magnetic domain walls in typical areas of those structures, an external magnetic field then applies along the long axis of these nanowires. Following that the created domain walls are propagated from one end to the other end of each wire by increasing the continuous/pulsed field strength. At each increased field value, a Fresnel image is recorded. The obtained results show that the characteristics of those created and propagated domain walls are dependent on various parameters, i.e. connecting structures, wall types and chiralities. Corners between the straight and linking sections of those curved nanowires also play a crucial role along witth the local defects created in these wire-edges and surfaces where a point-defect is considered as a potential well that could pin/distort those created/propagated domain walls. By the aid of this observations, the dynamic properties of domain walls with the creating and propagating processes in those curved nanowires are exposed. These outcomes are vital to design novel domain wall trap structures supporting reproducible domain wall motions. That are of interest in providing a better understanding of multiple bits moving in the furure 3D racetrack memory, logic gates, shift register and other spintronic/computing devices.

The direct determination of magnetic domain wall profiles using a split detector STEM

1978 ◽  
Vol 36 (1) ◽  
pp. 466-467
Author(s):  
J.N. Chapman ◽  
P.E. Batson ◽  
E.M. Waddell ◽  
R.P. Ferrier
Keyword(s):  
Electron Microscope ◽  
Domain Wall ◽  
Transmission Electron Microscope ◽  
Domain Walls ◽  
Photographic Plate ◽  
Magnetic Domain ◽  
Direct Determination ◽  
Quantitative Information ◽  
Scanning Transmission Electron Microscope ◽  
Transmission Electron

By far the most commonly used mode of Lorentz microscopy in the examination of ferromagnetic thin films is the Fresnel or defocus mode. Use of this mode in the conventional transmission electron microscope (CTEM) is straightforward and immediately reveals the existence of all domain walls present. However, if such quantitative information as the domain wall profile is required, the technique suffers from several disadvantages. These include the inability to directly observe fine image detail on the viewing screen because of the stringent illumination coherence requirements, the difficulty of accurately translating part of a photographic plate into quantitative electron intensity data, and, perhaps most severe, the difficulty of interpreting this data. One solution to the first-named problem is to use a CTEM equipped with a field emission gun (FEG) (Inoue, Harada and Yamamoto 1977) whilst a second is to use the equivalent mode of image formation in a scanning transmission electron microscope (STEM) (Chapman, Batson, Waddell, Ferrier and Craven 1977), a technique which largely overcomes the second-named problem as well.

The need of electron microscopy in the study of domains and domain walls in ferroelectrics

1994 ◽  
Vol 52 ◽  
pp. 550-551
Author(s):  
Wenwu Cao
Keyword(s):  
Domain Wall ◽  
Domain Walls ◽  
High Mobility ◽  
Continuum Theory ◽  
Polarization Vector ◽  
Ferroelectric Materials ◽  
Dielectric Constants ◽  
Nonlocal Coupling ◽  
Cubic Symmetry ◽  
Gradient Energy

Domain structures play a key role in determining the physical properties of ferroelectric materials. The formation of these ferroelectric domains and domain walls are determined by the intrinsic nonlinearity and the nonlocal coupling of the polarization. Analogous to soliton excitations, domain walls can have high mobility when the domain wall energy is high. The domain wall can be describes by a continuum theory owning to the long range nature of the dipole-dipole interactions in ferroelectrics. The simplest form for the Landau energy is the so called ϕ model which can be used to describe a second order phase transition from a cubic prototype,where Pi (i =1, 2, 3) are the components of polarization vector, α's are the linear and nonlinear dielectric constants. In order to take into account the nonlocal coupling, a gradient energy should be included, for cubic symmetry the gradient energy is given by,

scholarly journals Giant conductivity of mobile non-oxide domain walls

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
S. Ghara ◽  
K. Geirhos ◽  
L. Kuerten ◽  
P. Lunkenheimer ◽  
V. Tsurkan ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Domain Wall ◽  
Domain Walls ◽  
Building Blocks ◽  
External Fields ◽  
Tail Domain ◽  
Oxide Electronics ◽  
Domain Wall Mobility ◽  
Conductance Changes ◽  
Wall Mobility

AbstractAtomically sharp domain walls in ferroelectrics are considered as an ideal platform to realize easy-to-reconfigure nanoelectronic building blocks, created, manipulated and erased by external fields. However, conductive domain walls have been exclusively observed in oxides, where domain wall mobility and conductivity is largely influenced by stoichiometry and defects. Here, we report on giant conductivity of domain walls in the non-oxide ferroelectric GaV4S8. We observe conductive domain walls forming in zig-zagging structures, that are composed of head-to-head and tail-to-tail domain wall segments alternating on the nanoscale. Remarkably, both types of segments possess high conductivity, unimaginable in oxide ferroelectrics. These effectively 2D domain walls, dominating the 3D conductance, can be mobilized by magnetic fields, triggering abrupt conductance changes as large as eight orders of magnitude. These unique properties demonstrate that non-oxide ferroelectrics can be the source of novel phenomena beyond the realm of oxide electronics.

scholarly journals Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Ruyi Chen ◽  
Qirui Cui ◽  
Liyang Liao ◽  
Yingmei Zhu ◽  
Ruiqi Zhang ◽  
...  
Keyword(s):  
Domain Wall ◽  
Tunnel Junctions ◽  
Low Power Consumption ◽  
Stray Field ◽  
Magnetic Memory ◽  
Spin Orbit ◽  
Theoretic Analysis ◽  
Spintronic Devices ◽  
Deterministic Switching ◽  
Moriya Interaction

AbstractPerpendicularly magnetized synthetic antiferromagnets (SAF), possessing low net magnetization and high thermal stability as well as easy reading and writing characteristics, have been intensively explored to replace the ferromagnetic free layers of magnetic tunnel junctions as the kernel of spintronic devices. So far, utilizing spin-orbit torque (SOT) to realize deterministic switching of perpendicular SAF have been reported while a large external magnetic field is typically needed to break the symmetry, making it impractical for applications. Here, combining theoretic analysis and experimental results, we report that the effective modulation of Dzyaloshinskii-Moriya interaction by the interfacial crystallinity between ferromagnets and adjacent heavy metals plays an important role in domain wall configurations. By adjusting the domain wall configuration between Bloch type and Néel type, we successfully demonstrate the field-free SOT-induced magnetization switching in [Co/Pd]/Ru/[Co/Pd] SAF devices constructed with a simple wedged structure. Our work provides a practical route for utilization of perpendicularly SAF in SOT devices and paves the way for magnetic memory devices with high density, low stray field, and low power consumption.

scholarly journals Subsystem domination influence on magnetization reversal in designed magnetic patterns in ferrimagnetic Tb/Co multilayers

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Łukasz Frąckowiak ◽  
Feliks Stobiecki ◽  
Gabriel David Chaves-O’Flynn ◽  
Maciej Urbaniak ◽  
Marek Schmidt ◽  
...  
Keyword(s):  
Domain Wall ◽  
Magnetization Reversal ◽  
Domain Walls ◽  
Compensation Point ◽  
Relative Sign ◽  
Reversal Process ◽  
Effective Magnetization ◽  
Domain Wall Propagation ◽  
Characteristic Features ◽  
Magnetization Reversal Process

AbstractRecent results showed that the ferrimagnetic compensation point and other characteristic features of Tb/Co ferrimagnetic multilayers can be tailored by He+ ion bombardment. With appropriate choices of the He+ ion dose, we prepared two types of lattices composed of squares with either Tb or Co domination. The magnetization reversal of the first lattice is similar to that seen in ferromagnetic heterostructures consisting of areas with different switching fields. However, in the second lattice, the creation of domains without accompanying domain walls is possible. These domain patterns are particularly stable because they simultaneously lower the demagnetizing energy and the energy associated with the presence of domain walls (exchange and anisotropy). For both lattices, studies of magnetization reversal show that this process takes place by the propagation of the domain walls. If they are not present at the onset, the reversal starts from the nucleation of reversed domains and it is followed by domain wall propagation. The magnetization reversal process does not depend significantly on the relative sign of the effective magnetization in areas separated by domain walls.

On the kinetics of Hadamard-type fractional differential systems

2020 ◽  
Vol 23 (2) ◽  
pp. 553-570 ◽  
Author(s):  
Li Ma
Keyword(s):  
Differential Operator ◽  
Numerical Simulations ◽  
Type Inequality ◽  
The Other ◽  
Differential Systems ◽  
Fractional Differential Systems ◽  
Fractional Differential Operator ◽  
Fractional Differential ◽  
Kinetics Of ◽  
Theoretical Results

AbstractThis paper is devoted to the investigation of the kinetics of Hadamard-type fractional differential systems (HTFDSs) in two aspects. On one hand, the nonexistence of non-trivial periodic solutions for general HTFDSs, which are considered in some functional spaces, is proved and the corresponding eigenfunction of Hadamard-type fractional differential operator is also discussed. On the other hand, by the generalized Gronwall-type inequality, we estimate the bound of the Lyapunov exponents for HTFDSs. In addition, numerical simulations are addressed to verify the obtained theoretical results.

scholarly journals Domain walls in 4d $$ \mathcal{N} $$ = 1 SYM

2021 ◽  
Vol 2021 (3) ◽  
Author(s):  
Diego Delmastro ◽  
Jaume Gomis
Keyword(s):  
Domain Wall ◽  
Domain Walls ◽  
Simons Theory ◽  
Partition Functions ◽  
Quantum Field Theories ◽  
Yang Mills ◽  
Stable Domain ◽  
Coxeter Number ◽  
Topological Quantum ◽  
Simply Connected

Abstract 4d$$ \mathcal{N} $$ N = 1 super Yang-Mills (SYM) with simply connected gauge group G has h gapped vacua arising from the spontaneously broken discrete R-symmetry, where h is the dual Coxeter number of G. Therefore, the theory admits stable domain walls interpolating between any two vacua, but it is a nonperturbative problem to determine the low energy theory on the domain wall. We put forward an explicit answer to this question for all the domain walls for G = SU(N), Sp(N), Spin(N) and G2, and for the minimal domain wall connecting neighboring vacua for arbitrary G. We propose that the domain wall theories support specific nontrivial topological quantum field theories (TQFTs), which include the Chern-Simons theory proposed long ago by Acharya-Vafa for SU(N). We provide nontrivial evidence for our proposals by exactly matching renormalization group invariant partition functions twisted by global symmetries of SYM computed in the ultraviolet with those computed in our proposed infrared TQFTs. A crucial element in this matching is constructing the Hilbert space of spin TQFTs, that is, theories that depend on the spin structure of spacetime and admit fermionic states — a subject we delve into in some detail.

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