A novel low temperature vapor phase hydrolysis method for the production of nano-structured silica materials using silicon tetrachloride

RSC Advances ◽  
2014 ◽  
Vol 4 (17) ◽  
pp. 8703 ◽  
Author(s):  
Xuejing Chen ◽  
Jianguo Jiang ◽  
Feng Yan ◽  
Sicong Tian ◽  
Kaimin Li
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Silicon Tetrachloride ◽  
Hydrolysis Method ◽  
Silica Materials ◽  
Structured Silica ◽  
Vapor Phase Hydrolysis

scholarly journals Study on electrical properties of n-GaN grown at low temperature by metal-organic vapor phase epitaxy

2008 ◽  
Vol 57 (9) ◽  
pp. 5923
Author(s):  
Wang Lai ◽  
Zhang Xian-Peng ◽  
Xi Guang-Yi ◽  
Zhao Wei ◽  
Li Hong-Tao ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

HVPE GaN Growth on 4H SiC and Die Dicing

2016 ◽  
Vol 858 ◽  
pp. 1198-1201
Author(s):  
Alexander Usikov ◽  
Sergey Kurin ◽  
Iosif Barash ◽  
Alexander D. Roenkov ◽  
Andrei Antipov ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Irradiation ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Crack Formation ◽  
Mechanical Strain ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates ◽  
Laser Scribing ◽  
Higher Temperature

Hydride Vapor Phase Epitaxy (HVPE) was used to grow 1-4 μm thick undoped GaN layers on 4H-SiC and sapphire substrates. To adjust mechanical strain and crack formation in the GaN/SiC samples, the AlGaN-based buffer layer was grown at low temperature (920-980°C) and the GaN layer was grown at a higher temperature (1000-1040°C). Laser scribing through the GaN layer or the SiC substrate was applied to fabricate dies from the GaN/SiC and GaN/sapphire samples. The laser irradiation passing through the GaN layer to the sapphire substrate or through the SiC substrate to the GaN layer, along two orthogonal directions created a net of micro-cavities in sapphire and melted grooves in SiC that promote easy breakage of the sample into rectangular dies.

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