The influence of surface passivation on electronic energy relaxation dynamics of CdSe and CdSe/CdS nanocrystals studied using visible and near infrared transient absorption spectroscopy

Nanoscale ◽  
2015 ◽  
Vol 7 (13) ◽  
pp. 5884-5891 ◽  
Author(s):  
Chongyue Yi ◽  
Kenneth L. Knappenberger
Keyword(s):  
Absorption Spectroscopy ◽  
Near Infrared ◽  
Surface Passivation ◽  
Transient Absorption ◽  
Energy Relaxation ◽  
Electronic Energy ◽  
Transient Absorption Spectroscopy ◽  
Relaxation Dynamics ◽  
Cds Nanocrystals

scholarly journals Tracking dissociation dynamics of strong-field ionized 1,2-dibromoethane with femtosecond XUV transient absorption spectroscopy

2016 ◽  
Vol 18 (21) ◽  
pp. 14644-14653 ◽  
Author(s):  
Adam S. Chatterley ◽  
Florian Lackner ◽  
Daniel M. Neumark ◽  
Stephen R. Leone ◽  
Oliver Gessner
Keyword(s):  
Absorption Spectroscopy ◽  
Near Infrared ◽  
Transient Absorption ◽  
Extreme Ultraviolet ◽  
Strong Field ◽  
Transient Absorption Spectroscopy ◽  
Time Resolved ◽  
Strong Field Ionization ◽  
Dissociation Dynamics ◽  
Ultraviolet Absorption Spectroscopy

Using femtosecond time-resolved extreme ultraviolet absorption spectroscopy, the dissociation dynamics of the haloalkane 1,2-dibromoethane (DBE) have been explored following strong field ionization by femtosecond near infrared pulses at intensities between 7.5 × 1013 and 2.2 × 1014 W cm−2.

scholarly journals Infrared and near infrared transient absorption spectroscopy of molecular free radicals

1993 ◽  
Author(s):  
T.J. Sears ◽  
M. Wu ◽  
G.E. Hall ◽  
B.C. Chang ◽  
G. Hansford ◽  
...  
Keyword(s):  
Free Radicals ◽  
Absorption Spectroscopy ◽  
Near Infrared ◽  
Transient Absorption ◽  
Transient Absorption Spectroscopy

scholarly journals Carrier relaxation dynamics in defect states of epitaxial GaN/AlN/Si using ultrafast transient absorption spectroscopy

RSC Advances ◽  
2015 ◽  
Vol 5 (102) ◽  
pp. 83969-83975 ◽  
Author(s):  
Palak Dugar ◽  
Mahesh Kumar ◽  
Shibin Krishna T. C. ◽  
Neha Aggarwal ◽  
Govind Gupta
Keyword(s):  
Absorption Spectroscopy ◽  
Transient Absorption ◽  
Transient Absorption Spectroscopy ◽  
Relaxation Dynamics ◽  
Defect States ◽  
Carrier Relaxation ◽  
Ultrafast Transient Absorption ◽  
Defect Levels ◽  
Carrier Relaxation Dynamics ◽  
Ultrafast Transient Absorption Spectroscopy

Carrier relaxation dynamics through the defect levels in an epitaxial GaN/AlN/Si have been analysed on the femto–picosecond timescale, using ultrafast-transient absorption spectroscopy.

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