scholarly journals Scaling of anomalous Hall effects in facing-target reactively sputtered Fe4N films

2015 ◽  
Vol 17 (23) ◽  
pp. 15435-15441 ◽  
Author(s):  
Y. Zhang ◽  
W. B. Mi ◽  
X. C. Wang ◽  
X. X. Zhang

The scaling of the anomalous Hall effect in γ′-Fe4N films is investigated systematically for the first time.

Nanoscale ◽  
2021 ◽  
Author(s):  
Ning Jiang ◽  
Bo Yang ◽  
Yulong Bai ◽  
Yaoxiang Jiang ◽  
Shifeng Zhao

Both surface and interface scattering induced a sign reversal of anomalous Hall effects (AHE) in a few heterostructures. The sign reversal exiting in a single-substance can clarify the role of...


Author(s):  
J. Wunderlich ◽  
K. Olejník ◽  
L. P. Zârbo ◽  
V. P. Amin ◽  
J. Sinova ◽  
...  

This chapter discusses the Spin-injection Hall effect (SiHE), another member of the spin-dependent Hall effects that is closely related to the anomalous Hall effect (AHE), the spin Hall effect (SHE), and the inverse spin Hall effect (iSHE). The microscopic origins responsible for the appearance of spin-dependent Hall effects are due to the spin-orbit (SO) coupling-related asymmetrical deflections of spin carriers. Depending on the relative strength of the SO coupling compared to the energy-level broadening of the quasi-particle states due to disorder scattering, scattering-related extrinsic mechanisms or intrinsic band structure-related deflection dominate the spin-dependent Hall response. Both the iSHE and the SiHE require spin injection into a nonmagnetic system. Similar to the AHE, a spin-polarized charge current flows in the case of the SiHE and the SO coupling generates the spin-dependent Hall signal.


2018 ◽  
Vol 91 (8) ◽  
Author(s):  
Börge Göbel ◽  
Alexander Mook ◽  
Jürgen Henk ◽  
Ingrid Mertig

Abstract Hall effects of electrons can be produced by an external magnetic field, spin–orbit coupling or a topologically non-trivial spin texture. The topological Hall effect (THE) – caused by the latter – is commonly observed in magnetic skyrmion crystals. Here, we show analogies of the THE to the conventional Hall effect (HE), the anomalous Hall effect (AHE), and the spin Hall effect (SHE). In the limit of strong coupling between conduction electron spins and the local magnetic texture the THE can be described by means of a fictitious, “emergent” magnetic field. In this sense the THE can be mapped onto the HE caused by an external magnetic field. Due to complete alignment of electron spin and magnetic texture, the transverse charge conductivity is linked to a transverse spin conductivity. They are disconnected for weak coupling of electron spin and magnetic texture; the THE is then related to the AHE. The topological equivalent to the SHE can be found in antiferromagnetic skyrmion crystals. We substantiate our claims by calculations of the edge states for a finite sample. These states reveal in which situation the topological analogue to a quantized HE, quantized AHE, and quantized SHE can be found.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Y. Hayashi ◽  
Y. Okamura ◽  
N. Kanazawa ◽  
T. Yu ◽  
T. Koretsune ◽  
...  

AbstractPhysics of Weyl electrons has been attracting considerable interests and further accelerated by recent discoveries of giant anomalous Hall effect (AHE) and topological Hall effect (THE) in several magnetic systems including non-coplanar magnets with spin chirality or small-size skyrmions. These AHEs/THEs are often attributed to the intense Berry curvature generated around the Weyl nodes accompanied by band anti-crossings, yet the direct experimental evidence still remains elusive. Here, we demonstrate an essential role of the band anti-crossing for the giant AHE and THE in MnGe thin film by using the terahertz magneto-optical spectroscopy. The low-energy resonance structures around ~ 1.2 meV in the optical Hall conductivity show the enhanced AHE and THE, indicating the emergence of at least two distinct anti-crossings near the Fermi level. The theoretical analysis demonstrates that the competition of these resonances with opposite signs is a cause of the strong temperature and magnetic-field dependences of observed DC Hall conductivity. These results lead to the comprehensive understanding of the interplay among the transport phenomena, optical responses and electronic/spin structures.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fei Wang ◽  
Xuepeng Wang ◽  
Yi-Fan Zhao ◽  
Di Xiao ◽  
Ling-Jie Zhou ◽  
...  

AbstractThe Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.


2021 ◽  
pp. 2006301
Author(s):  
Satya N. Guin ◽  
Qiunan Xu ◽  
Nitesh Kumar ◽  
Hsiang‐Hsi Kung ◽  
Sydney Dufresne ◽  
...  

2020 ◽  
Vol 4 (9) ◽  
Author(s):  
Nan Liu ◽  
Xuefan Niu ◽  
Yuxin Liu ◽  
Qinghua Zhang ◽  
Lin Gu ◽  
...  

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