Tight-binding quantum chemical molecular dynamics simulations for the elucidation of chemical reaction dynamics in SiC etching with SF6/O2 plasma
2016 ◽
Vol 18
(11)
◽
pp. 7808-7819
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Keyword(s):
Simulations based on tight-binding quantum chemical molecular dynamics are performed to elucidate SiC etching mechanisms and to study SiC surface reactions with SF5 radicals and O atoms.
2013 ◽
Vol 52
(2R)
◽
pp. 026502
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2005 ◽
Vol 102
(3)
◽
pp. 318-327
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2013 ◽
Vol 2013.5
(0)
◽
pp. 119-120
2016 ◽
Vol 8
(18)
◽
pp. 11830-11841
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2010 ◽
Vol 4
(11)
◽
pp. 1644-1653
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2014 ◽
Vol 118
(37)
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pp. 21580-21588
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2013 ◽
Vol 12
(1)
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pp. A3-A13
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