Atomistic Mechanisms of Chemical Mechanical Polishing of a Cu Surface in Aqueous H2O2: Tight-Binding Quantum Chemical Molecular Dynamics Simulations

2016 ◽  
Vol 8 (18) ◽  
pp. 11830-11841 ◽  
Author(s):  
Kentaro Kawaguchi ◽  
Hiroshi Ito ◽  
Takuya Kuwahara ◽  
Yuji Higuchi ◽  
Nobuki Ozawa ◽  
...  
Author(s):  
Kentaro Kawaguchi ◽  
Yang Wang ◽  
Jingxiang Xu ◽  
Yusuke Ootani ◽  
Yuji Higuchi ◽  
...  

Chemical mechanical polishing (CMP) is a key manufacturing process for applying gallium nitride (GaN), especially the Ga-face GaN, to semiconductor devices such as laser diodes. However, the CMP efficiency for...


2016 ◽  
Vol 18 (11) ◽  
pp. 7808-7819 ◽  
Author(s):  
Hiroshi Ito ◽  
Takuya Kuwahara ◽  
Kentaro Kawaguchi ◽  
Yuji Higuchi ◽  
Nobuki Ozawa ◽  
...  

Simulations based on tight-binding quantum chemical molecular dynamics are performed to elucidate SiC etching mechanisms and to study SiC surface reactions with SF5 radicals and O atoms.


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