Electronic and magnetic properties of SnSe monolayers doped by Ga, In, As, and Sb: a first-principles study
2016 ◽
Vol 18
(11)
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pp. 8158-8164
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Keyword(s):
Band Gap
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A SnSe monolayer with an orthorhombic Pnma GeS structure is an important two-dimensional (2D) indirect band gap material at room temperature.
2019 ◽
Vol 129
◽
pp. 227-233
2014 ◽
Vol 586
◽
pp. 176-179
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2019 ◽
Vol 224
◽
pp. 93-99
◽
2020 ◽
Vol 815
◽
pp. 152449
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