Colloidal quantum dot ligand engineering for high performance solar cells

2016 ◽  
Vol 9 (4) ◽  
pp. 1130-1143 ◽  
Author(s):  
Ruili Wang ◽  
Yuequn Shang ◽  
Pongsakorn Kanjanaboos ◽  
Wenjia Zhou ◽  
Zhijun Ning ◽  
...  

Colloidal quantum dots (CQDs) are fast-improving materials for next-generation solution-processed optoelectronic devices such as solar cells, photocatalysis, light emitting diodes, and photodetectors.

2018 ◽  
Vol 30 (28) ◽  
pp. 1801387 ◽  
Author(s):  
Zhenxing Zhang ◽  
Yuxun Ye ◽  
Chaodan Pu ◽  
Yunzhou Deng ◽  
Xingliang Dai ◽  
...  

Author(s):  
Lishuang Wang ◽  
Ying Lv ◽  
Jie Lin ◽  
Jialong Zhao ◽  
Xingyuan Liu ◽  
...  

For quantum dots light-emitting diodes (QLEDs), typical colloidal quantum dots (QDs) are usually composed of a core/shell heterostructure which is covered with organic ligands as surface passivated materials to confine...


2006 ◽  
Vol 939 ◽  
Author(s):  
Adrienne D. Stiff-Roberts ◽  
Abhishek Gupta ◽  
Zhiya Zhao

ABSTRACTThe motivation and distinct approach for this work is the use of intraband transitions within colloidal quantum dots for the detection of mid- (3-5 μm) and/or long-wave (8-14 μm) infrared light. The CdSe colloidal quantum dot/MEH-PPV conducting polymer nanocomposite material is well-suited for this application due to the ∼1.5 eV difference between the corresponding electron affinities. Therefore, CdSe colloidal quantum dots embedded in MEH-PPV should provide electron quantum confinement such that intraband transitions can occur in the conduction band. Further, it is desirable to deposit these nanocomposites on semiconductor substrates to enable charge transfer of photogenerated electron-hole pairs from the substrate to the nanocomposite. In this way, optoelectronic devices analogous to those achieved using Stranski-Krastanow quantum dots grown by epitaxy can be realized. To date, there have been relatively few investigations of colloidal quantum dot nanocomposites deposited on GaAs substrates. However, it is crucial to develop a better understanding of the optical properties of these hybrid material systems if such heterostructures are to be used for optoelectronic devices, such as infrared photodetectors. By depositing the nanocomposites on GaAs substrates featuring different doping characteristics and measuring the corresponding Fourier transform infrared absorbance, the feasibility of these intraband transitions is demonstrated at room temperature.


2017 ◽  
Vol 5 (35) ◽  
pp. 9138-9145 ◽  
Author(s):  
Zhaobing Tang ◽  
Jie Lin ◽  
Lishuang Wang ◽  
Ying Lv ◽  
Yongsheng Hu ◽  
...  

High performance top-emitting green quantum dot light-emitting diodes have been developed based on an all-solution process and with a bottom Al anode.


2013 ◽  
Vol 5 (22) ◽  
pp. 12011-12016 ◽  
Author(s):  
Huaibin Shen ◽  
Qinli Lin ◽  
Hongzhe Wang ◽  
Lei Qian ◽  
Yixing Yang ◽  
...  

2019 ◽  
Vol 7 (12) ◽  
pp. 3429-3435 ◽  
Author(s):  
Sukyung Choi ◽  
Jaehyun Moon ◽  
Hyunsu Cho ◽  
Byoung-Hwa Kwon ◽  
Nam Sung Cho ◽  
...  

Surface-exchanged, partially pyridine-functionalized colloidal quantum dot-based light-emitting diodes (QD-LEDs) exhibit a low turn-on voltage and high brightness.


2019 ◽  
Vol 6 (10) ◽  
pp. 2009-2015 ◽  
Author(s):  
Zhiwen Yang ◽  
Qianqian Wu ◽  
Gongli Lin ◽  
Xiaochuan Zhou ◽  
Weijie Wu ◽  
...  

An all-solution processed inverted green quantum dot-based light-emitting diode with concurrent high efficiency and long lifetime is obtained by precisely controlled double shell growth of quantum dots.


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