An organic–metal–inorganic three-component nanojunction array: design, construction and its reversible diode-like resistive electrical switching behavior

2016 ◽  
Vol 4 (3) ◽  
pp. 504-512 ◽  
Author(s):  
Jing Wang ◽  
Weiqing Xu ◽  
Xiangyuan Liu ◽  
Fou Bai ◽  
Xianghua Zhou ◽  
...  
Keyword(s):  
Switching Behavior ◽  
Organic Metal ◽  
Array Design ◽  
Electrical Switching ◽  
Switchable Diode Effect ◽  
Design Construction

AgTCNQF4–AgNPs–TiO2 as an organic–metal–inorganic hetero-nanojunction shows a switchable diode effect, reversible electrical switching and memory behavior.

Electrical switching properties and structural characteristics of GeSe–GeTe films

Nanoscale ◽  
2019 ◽  
Vol 11 (4) ◽  
pp. 1595-1603 ◽  
Author(s):  
Kun Ren ◽  
Min Zhu ◽  
Wenxiong Song ◽  
Shilong Lv ◽  
Mengjiao Xia ◽  
...  
Keyword(s):  
Structural Characteristics ◽  
Switching Behavior ◽  
Structural Motifs ◽  
Electrical Switching

The local structural motifs in GeSe–GeTe have been determined, which is essential to understand its thermal and electrical switching behavior.

scholarly journals Modeling Electrical Switching Behavior of Carbon Resistive Memory

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 8735-8742
Author(s):  
Qiao-Feng Ou ◽  
Lei Wang ◽  
Bang-Shu Xiong
Keyword(s):  
Switching Behavior ◽  
Resistive Memory ◽  
Electrical Switching

Electrical switching behavior of bulk AgI-Ag 2 O-MoO 3 glass with ON-state current and thickness

2018 ◽  
Vol 5 (1) ◽  
pp. 2705-2709 ◽  
Author(s):  
B. Tanujit ◽  
G. Sreevidya Varma ◽  
K. Rajanna ◽  
S. Asokan
Keyword(s):  
Switching Behavior ◽  
Electrical Switching

A Comparative Study of Electrical Switching Behavior of Certain Tellurium Based Chalcogenide Thin Films for Phase Change Memory (PCM) Applications

2010 ◽  
Vol 123-125 ◽  
pp. 1207-1210
Author(s):  
Chandasree Das ◽  
G. Mohan Rao ◽  
S. Asokan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Switching Behavior ◽  
Flash Evaporation ◽  
Electron Microscopic ◽  
Electrical Switching ◽  
Memory Switching ◽  
Three Samples ◽  
Electron Microscopic Image ◽  
The Difference

This work describes the electrical switching behavior of three telluride based amorphous chalcogenide thin film samples, Al-Te, Ge-Se-Te and Ge-Te-Si. These amorphous thin films are made using bulk glassy ingots, prepared by conventional melt quenching technique, using flash evaporation technique; while Al-Te sample has been coated in coplanar electrode geometry, Ge-Se-Te and Ge-Te-Si samples have been deposited with sandwich electrodes. It is observed that all the three samples studied, exhibit memory switching behavior in thin film form, with Ge-Te-Si sample exhibiting a faster switching characteristic. The difference seen in the switching voltages of the three samples studied has been understood on the basis of difference in device geometry and thickness. Scanning electron microscopic image of switched region of a representative Ge15Te81Si4 sample shows a structural change and formation of crystallites in the electrode region, which is responsible for making a conducting channel between the two electrodes during switching.

Nonvolatile electrical switching behavior observed in a functional polyimide thin film embedded with silver nanoparticles

RSC Advances ◽  
2012 ◽  
Vol 2 (26) ◽  
pp. 9846 ◽  
Author(s):  
Guofeng Tian ◽  
Dezhen Wu ◽  
Lei Shi ◽  
Shengli Qi ◽  
Zhanpeng Wu
Keyword(s):  
Thin Film ◽  
Silver Nanoparticles ◽  
Switching Behavior ◽  
Electrical Switching

Studies on electrical switching behavior and optical band gap of amorphous Ge–Te–Sn thin films

2011 ◽  
Vol 106 (4) ◽  
pp. 989-994 ◽  
Author(s):  
Chandasree Das ◽  
M. G. Mahesha ◽  
G. Mohan Rao ◽  
S. Asokan
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Switching Behavior ◽  
Electrical Switching

Nonpolar electrical switching behavior in Cu–Si(Cu)Ox–Pt stacks

2013 ◽  
Vol 544 ◽  
pp. 134-138 ◽  
Author(s):  
Jian-Shiou Huang ◽  
Li-Ming Chen ◽  
Ting-Yi Lin ◽  
Chi-Young Lee ◽  
Tsung-Shune Chin
Keyword(s):  
Switching Behavior ◽  
Electrical Switching
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