switchable diode effect
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AIP Advances ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 095002
Author(s):  
Tong Li ◽  
Ying Yang ◽  
Yuelin Zhang ◽  
Minghui Pei ◽  
Yuben Yang ◽  
...  

Nanoscale ◽  
2018 ◽  
Vol 10 (31) ◽  
pp. 14885-14892 ◽  
Author(s):  
Siyuan Wan ◽  
Yue Li ◽  
Wei Li ◽  
Xiaoyu Mao ◽  
Wenguang Zhu ◽  
...  

A switchable diode based on room-temperature two-dimensional ferroelectric α-In2Se3 thin layers.


2017 ◽  
Vol 123 (9) ◽  
Author(s):  
Xinqiang Pan ◽  
Yao Shuai ◽  
Chuangui Wu ◽  
Wenbo Luo ◽  
Xiangyu Sun ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (65) ◽  
pp. 60074-60079 ◽  
Author(s):  
Ying Ding ◽  
Xing Xu ◽  
Amar Bhalla ◽  
Xiubo Yang ◽  
Jianghua Chen ◽  
...  

Oxygen deficient BaZrO3 films with bi-layered structures show switchable diode effects. Both oxygen vacancies and grain boundaries play important parts.


2016 ◽  
Vol 4 (3) ◽  
pp. 504-512 ◽  
Author(s):  
Jing Wang ◽  
Weiqing Xu ◽  
Xiangyuan Liu ◽  
Fou Bai ◽  
Xianghua Zhou ◽  
...  

AgTCNQF4–AgNPs–TiO2 as an organic–metal–inorganic hetero-nanojunction shows a switchable diode effect, reversible electrical switching and memory behavior.


2015 ◽  
Vol 118 (11) ◽  
pp. 114101 ◽  
Author(s):  
Hiroki Matsuo ◽  
Yuuki Kitanaka ◽  
Ryotaro Inoue ◽  
Yuji Noguchi ◽  
Masaru Miyayama

2015 ◽  
Vol 3 (43) ◽  
pp. 11516-11523 ◽  
Author(s):  
Maryam Salimian ◽  
Maxim Ivanov ◽  
Francis Leonard Deepak ◽  
Dmitri Y. Petrovykh ◽  
Igor Bdikin ◽  
...  

This work describes a new hydrothermal one-step method for the simple and controllable synthesis of reduced GO/nickel nanocomposites. The switchable diode effect induced by large resistive switching behaviour shows a promising potential for graphene based embedded nanoelectronic applications.


AIP Advances ◽  
2014 ◽  
Vol 4 (12) ◽  
pp. 127111 ◽  
Author(s):  
Z. X. Li ◽  
X. L. Liu ◽  
W. J. Chen ◽  
X. Y. Zhang ◽  
Ying Wang ◽  
...  

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