Ambient temperature deposition of gallium nitride/gallium oxynitride from a deep eutectic electrolyte, under potential control

2016 ◽  
Vol 52 (38) ◽  
pp. 6407-6410 ◽  
Author(s):  
Sujoy Sarkar ◽  
S. Sampath

A ternary, ionically conducting, deep eutectic solvent based on acetamide, urea and gallium nitrate is reported for the electrodeposition of gallium nitride/gallium indium nitride under ambient conditions; blue and white light emitting photoluminescent deposits are obtained under potential control.

2014 ◽  
Vol 93 ◽  
pp. 264-269 ◽  
Author(s):  
Henryk Teisseyre ◽  
Michal Bockowski ◽  
Toby David Young ◽  
Szymon Grzanka ◽  
Yaroslav Zhydachevskii ◽  
...  

In this communication, the use of gallium nitride doped with beryllium as an efficient converter for white light emitting diode is proposed. Until now beryllium in this material was mostly studied as a potential p-type dopant. Unfortunately, the realization of p-type conductivity in such a way seems impossible. However, due to a very intensive yellow emission, bulk crystals doped with beryllium can be used as light converters. In this communication, it is demonstrated that realisation of such diode is possible and realisation of a colour rendering index is close to that necessary for white light emission.


2016 ◽  
Vol 52 (43) ◽  
pp. 7051-7051
Author(s):  
Sujoy Sarkar ◽  
S. Sampath

Correction for ‘Ambient temperature deposition of gallium nitride/gallium oxynitride from a deep eutectic electrolyte, under potential control’ by Sujoy Sarkar et al., Chem. Commun., 2016, 52, 6407–6410.


Small ◽  
2018 ◽  
Vol 14 (17) ◽  
pp. 1870076 ◽  
Author(s):  
Huayna Terraschke ◽  
Jacob Olchowka ◽  
Eugenie Geringer ◽  
Aline Varella Rodrigues ◽  
Claudia Wickleder

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