Simulation Result of Gallium Indium Nitride Solar Cells

InGaN can reach all values of bandgap from 3.42 to 0.7eV, which covers almost the entire solar spectrum. This study is to understand the influence of each parameter of the solar cell for an improved optimization of performance. The yield obtained for a reference cell is 12.2 % for optimal values of doping of the layers. For generation and recombination, performance of the cell varies with these settings. III nitrides have a high absorption coefficient, a very thin layers of material are sufficient to absorb most of the light.

Local Heat Energy Transport Analyses in Gallium-Indium-Nitride/Gallium Nitride Heterostructure by Microscopic Raman Imaging Exploiting Simultaneous Irradiation of Two Laser Beams

Local heat transport in two GaxIn1-xN/GaN-heterostructures on sapphire substrates is investigated by microscopic Raman imaging using two lasers of 532 nm (Raman observation) and 325 nm (heat generation and Raman observation), which enables the separation of heat generation and Raman observation positions. It is found that E2(high) and A1(LO) modes of the Ga0.84In0.16N layer exhibit mutually different characteristics, which indicates the analysis of the occupation of the A1(LO) mode is available. E2(high) mode of the GaN layer observed by the 532-nm laser reveals that the transport of the heat energy generated in the Ga0.84In0.16N layer to the GaN under layer is blocked in the high-density area of misfit dislocation in the vicinity of the heterointerface.

A simulation of Gallium Indium Nitride Based Solar Cells

InGaN can reach all values of bandgap from 3.42 to 0.7eV, which covers almost the entire solar spectrum. This study is to understand the influence of each parameter of the solar cell for an improved optimization of performance. The yield obtained for a reference cell is 12.2 % for optimal values of doping of the layers. For generation and recombination, performance of the cell varies with these settings. III nitrides have a high absorption coefficient, a very thin layers of material are sufficient to absorb most of the light.

Ambient temperature deposition of gallium nitride/gallium oxynitride from a deep eutectic electrolyte, under potential control

A ternary, ionically conducting, deep eutectic solvent based on acetamide, urea and gallium nitrate is reported for the electrodeposition of gallium nitride/gallium indium nitride under ambient conditions; blue and white light emitting photoluminescent deposits are obtained under potential control.