Efficiency droop in gallium indium nitride (GaInN)/gallium nitride (GaN) LEDs

2014 ◽  
pp. 279-300 ◽  
Author(s):  
D.S. Meyaard ◽  
G.-B. Lin ◽  
J. Cho ◽  
E.F. Schubert
Keyword(s):  
Gallium Nitride ◽  
Indium Nitride ◽  
Efficiency Droop ◽  
Gallium Indium Nitride

Ambient temperature deposition of gallium nitride/gallium oxynitride from a deep eutectic electrolyte, under potential control

2016 ◽  
Vol 52 (38) ◽  
pp. 6407-6410 ◽  
Author(s):  
Sujoy Sarkar ◽  
S. Sampath
Keyword(s):  
Gallium Nitride ◽  
White Light ◽  
Indium Nitride ◽  
Deep Eutectic Solvent ◽  
Gallium Nitrate ◽  
Ambient Conditions ◽  
Light Emitting ◽  
Gallium Indium Nitride ◽  
Potential Control ◽  
Temperature Deposition

A ternary, ionically conducting, deep eutectic solvent based on acetamide, urea and gallium nitrate is reported for the electrodeposition of gallium nitride/gallium indium nitride under ambient conditions; blue and white light emitting photoluminescent deposits are obtained under potential control.

Gallium Indium Nitride-Based Green Lasers

2012 ◽  
Vol 30 (5) ◽  
pp. 679-699 ◽  
Author(s):  
Dmitry Sizov ◽  
Rajaram Bhat ◽  
Chung-En Zah
Keyword(s):  
Indium Nitride ◽  
Gallium Indium Nitride

scholarly journals A simulation of Gallium Indium Nitride Based Solar Cells

2020 ◽  
Author(s):  
Jin Wu
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Absorption Coefficient ◽  
Indium Nitride ◽  
Solar Spectrum ◽  
Thin Layers ◽  
Gallium Indium Nitride ◽  
Optimal Values ◽  
High Absorption Coefficient ◽  
High Absorption

InGaN can reach all values of bandgap from 3.42 to 0.7eV, which covers almost the entire solar spectrum. This study is to understand the influence of each parameter of the solar cell for an improved optimization of performance. The yield obtained for a reference cell is 12.2 % for optimal values of doping of the layers. For generation and recombination, performance of the cell varies with these settings. III nitrides have a high absorption coefficient, a very thin layers of material are sufficient to absorb most of the light.

The Velocity-Field Characteristic Of Indium Nitride

1997 ◽  
Vol 482 ◽  
Author(s):  
S. K. O'Leary ◽  
B. E. Foutz ◽  
M. S. Shur ◽  
L. F. Eastman ◽  
U. V. Bhapkar
Keyword(s):  
Gallium Nitride ◽  
Velocity Field ◽  
Drift Velocity ◽  
Room Temperature ◽  
Indium Nitride ◽  
Device Performance ◽  
Temperature Peak ◽  
Ensemble Monte Carlo ◽  
Field Characteristic ◽  
Nominal Parameter

AbstractWe determine the velocity-field characteristic of wurtzite indium nitride using an ensemble Monte Carlo approach. It is found that indium nitride exhibits an extremely high room temperature peak drift velocity, 4.2 × 107 cm/s, at a doping concentration of 1 × 1017 cm−3. This exceeds that of gallium nitride, 2.9 × 107 cm/s, by approximately 40 %. For our nominal parameter selections, the saturation drift velocity of indium nitride is found to be 1.8 × 107 cm/s. The device performance of this material, as characterized by the cut-off frequency, is found to superior to that of gallium nitride, gallium arsenide, and silicon.

scholarly journals Local Heat Energy Transport Analyses in Gallium-Indium-Nitride/Gallium Nitride Heterostructure by Microscopic Raman Imaging Exploiting Simultaneous Irradiation of Two Laser Beams

2020 ◽  
Author(s):  
Shungo Okamoto ◽  
Naomichi Saito ◽  
Kotaro Ito ◽  
Bei Ma ◽  
Ken Morita ◽  
...  
Keyword(s):  
Heat Generation ◽  
Energy Transport ◽  
Indium Nitride ◽  
Local Heat ◽  
Heat Energy ◽  
Raman Imaging ◽  
Gallium Indium Nitride ◽  
Simultaneous Irradiation ◽  
Different Characteristics ◽  
532 Nm

Abstract Local heat transport in two GaxIn1-xN/GaN-heterostructures on sapphire substrates is investigated by microscopic Raman imaging using two lasers of 532 nm (Raman observation) and 325 nm (heat generation and Raman observation), which enables the separation of heat generation and Raman observation positions. It is found that E2(high) and A1(LO) modes of the Ga0.84In0.16N layer exhibit mutually different characteristics, which indicates the analysis of the occupation of the A1(LO) mode is available. E2(high) mode of the GaN layer observed by the 532-nm laser reveals that the transport of the heat energy generated in the Ga0.84In0.16N layer to the GaN under layer is blocked in the high-density area of misfit dislocation in the vicinity of the heterointerface.

Growth of Bulk, Polycrystalline Gallium and Indium Nitride at Sub-Atmospheric Pressures

1997 ◽  
Vol 468 ◽  
Author(s):  
John C. Angus ◽  
Alberto Argoitia ◽  
Cliff C. Hayman ◽  
Long Wang ◽  
Jeffrey S. Dyck ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Indium Nitride ◽  
Photo Luminescence ◽  
Electron Cyclotron ◽  
Band Edge ◽  
Near Band Edge ◽  
Yellow Band ◽  
Pure Metals

ABSTRACTBulk, polycrystalline gallium nitride and indium nitride were crystallized at sub-atmospheric pressures by saturating the pure metals with nitrogen from a microwave electron cyclotron resonance source. Saturation of Ga/In melts with nitrogen led only to the crystallization of gallium nitride. The polycrystalline samples were wurtzitic. The gallium nitride was well faceted, with narrow Raman lineshapes, and showed near-band-edge and yellow band photo-luminescence at both 4K and 300K. The indium nitride was formed in smaller amounts, was less well faceted, and showed no photoluminescence.

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