Effect of multilayer structure, stacking order and external electric field on the electrical properties of few-layer boron-phosphide

Development of nanoelectronics requires two-dimensional (2D) systems with both direct-bandgap and tunable electronic properties as they act in response to the external electric field (E-field).

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The sp2 character of new two-dimensional AsB with tunable electronic properties predicted by theoretical studies

Physical Chemistry Chemical Physics ◽

10.1039/c9cp03385h ◽

2019 ◽

Vol 21 (37) ◽

pp. 20981-20987

Author(s):

Jie Zhang ◽

Huijun Liu ◽

Yun Gao ◽

Xiaohong Xia ◽

Zhongbing Huang

Keyword(s):

Electronic Material ◽

Electronic Properties ◽

Layer Thickness ◽

Single Layer ◽

Theoretical Studies ◽

Two Dimensional ◽

Direct Bandgap ◽

Stacking Order ◽

Orbital Hybridization

We identify a semiconducting 2D electronic material, single-layer AsB, which has a suitable direct bandgap of 1.18 eV. Its frontiers state is sp2 orbital hybridization, which can be effectively tuned by layer thickness, stacking order and strain.

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The electric field modulation of electronic properties in a type-II phosphorene/PbI2 van der Waals heterojunction

Physical Chemistry Chemical Physics ◽

10.1039/c9cp00733d ◽

2019 ◽

Vol 21 (15) ◽

pp. 7765-7772 ◽

Cited By ~ 8

Author(s):

Yuting Wei ◽

Fei Wang ◽

Wenli Zhang ◽

Xiuwen Zhang

Keyword(s):

Solar Energy ◽

Electric Field ◽

Electronic Properties ◽

External Electric Field ◽

Van Der Waals ◽

Optoelectronic Devices ◽

Band Alignment ◽

Type Ii ◽

Direct Bandgap ◽

Field Modulation

The 0.52/0.83 eV direct bandgap of P/PbI2 possesses a type-II band alignment, can effectively be regulated to 0.90/1.54 eV using an external electric field in DFT/HSE06, and is useful for solar energy and optoelectronic devices.

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Two-dimensional GeS with tunable electronic properties via external electric field and strain

Nanotechnology ◽

10.1088/0957-4484/27/27/274001 ◽

2016 ◽

Vol 27 (27) ◽

pp. 274001 ◽

Cited By ~ 48

Author(s):

Shengli Zhang ◽

Ning Wang ◽

Shangguo Liu ◽

Shiping Huang ◽

Wenhan Zhou ◽

...

Keyword(s):

Electric Field ◽

Electronic Properties ◽

External Electric Field ◽

Two Dimensional

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Electric field induced insulator to metal transition in a buckled GaAs monolayer

RSC Advances ◽

10.1039/c6ra07415d ◽

2016 ◽

Vol 6 (58) ◽

pp. 52920-52924 ◽

Cited By ~ 12

Author(s):

Bhagwati Prasad Bahuguna ◽

L. K. Saini ◽

Brajesh Tiwari ◽

R. O. Sharma

Keyword(s):

Electric Field ◽

Electronic Properties ◽

External Electric Field ◽

First Principles ◽

Two Dimensional ◽

First Principles Calculations

We investigate the electronic properties of two-dimensional buckled honeycomb GaAs in the presence of an external electric field using first principles calculations.

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Tuning electronic properties of bilayer boron-phosphide by stacking order and electric field: A first principles investigation

2016 17th International Conference on Electronic Packaging Technology (ICEPT) ◽

10.1109/icept.2016.7583241 ◽

2016 ◽

Author(s):

Chunjian Tan ◽

Qiang Zhou ◽

Xianping Chen

Keyword(s):

Electric Field ◽

Electronic Properties ◽

First Principles ◽

Boron Phosphide ◽

Stacking Order

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Tuning Electronic Properties of the SiC-GeC Bilayer by External Electric Field: A First-Principles Study

Micromachines ◽

10.3390/mi10050309 ◽

2019 ◽

Vol 10 (5) ◽

pp. 309

Author(s):

Min Luo ◽

Bin Yu ◽

Yu-e Xu

Keyword(s):

Band Structure ◽

Electric Field ◽

Fermi Level ◽

Electronic Properties ◽

External Electric Field ◽

Valence Band ◽

Conduction Band ◽

First Principles ◽

First Principles Calculations ◽

Direct Bandgap

First-principles calculations were used to investigate the electronic properties of the SiC/GeC nanosheet (the thickness was about 8 Å). With no electric field (E-field), the SiC/GeC nanosheet was shown to have a direct bandgap of 1.90 eV. In the band structure, the valence band of the SiC/GeC nanosheet was mainly made up of C-p, while the conduction band was mainly made up of C-p, Si-p, and Ge-p, respectively. Application of the E-field to the SiC/GeC nanosheet was found to facilitate modulation of the bandgap, regularly reducing it to zero, which was linked to the direction and strength of the E-field. The major bandgap modulation was attributed to the migration of C-p, Si-p, and Ge-p orbitals around the Fermi level. Our conclusions might give some theoretical guidance for the development and application of the SiC/GeC nanosheet.

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