Structural and magneto-electronic properties and electric field-mediated effects for transition metal-terminated zigzag h-BN nanoribbons

2017 ◽  
Vol 19 (6) ◽  
pp. 4469-4477 ◽  
Author(s):  
J. Liu ◽  
Z. H. Zhang ◽  
P. F. Yuan ◽  
Z. Q. Fan
Keyword(s):  
Transition Metal ◽  
Boron Nitride ◽  
Electric Field ◽  
Electronic Properties ◽  
Spin Polarization ◽  
High Spin ◽  
Mediated Effects ◽  
High Spin Polarization ◽  
Boron Nitride Nanoribbons ◽  
Very High

Transition metal terminated zigzag boron nitride nanoribbons show very high spin polarization and are electric field-sensitive in the ferromagnetic (FM) state.

Spin dynamics at very high spin polarization

2004 ◽  
Vol 70 (17) ◽  
Author(s):  
Jamie D. Walls ◽  
Frederick K. H. Phoa ◽  
Yung-Ya Lin
Keyword(s):  
Spin Polarization ◽  
High Spin ◽  
Spin Dynamics ◽  
High Spin Polarization ◽  
Very High

Very high spin polarization in GaAs by injection from a (Ga,Mn)As Zener diode

2004 ◽  
Vol 84 (18) ◽  
pp. 3495-3497 ◽  
Author(s):  
P. Van Dorpe ◽  
Z. Liu ◽  
W. Van Roy ◽  
V. F. Motsnyi ◽  
M. Sawicki ◽  
...  
Keyword(s):  
Spin Polarization ◽  
High Spin ◽  
Zener Diode ◽  
High Spin Polarization ◽  
Very High

Interfacial antiferromagnetic coupling and high spin polarization in metallic phthalocyanines

2021 ◽  
Vol 103 (2) ◽  
Author(s):  
Junwei Tong ◽  
Feifei Luo ◽  
Liuxia Ruan ◽  
Guohuai Liu ◽  
Lianqun Zhou ◽  
...  
Keyword(s):  
Spin Polarization ◽  
High Spin ◽  
Antiferromagnetic Coupling ◽  
High Spin Polarization

High Spin Polarization of Conduction Band Electrons in GaAs-GaAsP Strained Layer Superlattice Fabricated as a Spin-Polarized Electron Source

2004 ◽  
Vol 43 (6A) ◽  
pp. 3371-3375 ◽  
Author(s):  
Tetsuya Matsuyama ◽  
Hisaya Takikita ◽  
Hiromichi Horinaka ◽  
Kenji Wada ◽  
Tsutomu Nakanishi ◽  
...  
Keyword(s):  
Conduction Band ◽  
Spin Polarization ◽  
High Spin ◽  
Electron Source ◽  
Strained Layer ◽  
Spin Polarized ◽  
High Spin Polarization ◽  
Strained Layer Superlattice

Theory Of 3d Transition Metal Defects In 3C SiC

1996 ◽  
Vol 442 ◽  
Author(s):  
Harald Overhof
Keyword(s):  
Electronic Structure ◽  
Transition Metal ◽  
Electronic Properties ◽  
Crystal Field ◽  
High Spin ◽  
Crystal Field Splitting ◽  
Large Crystal ◽  
Field Splitting ◽  
Vacancy Model ◽  
The Difference

AbstractThe electronic properties of 3d transition metal (TM) defects located on one of the four different tetrahedral positions in 3C SiC are shown to be quite site-dependent. We explain the differences for the 3d TMs on the two substitutional sites within the vacancy model: the difference of the electronic structure between the carbon vacancy VC and the silicon vacancy VSi is responsible for the differences of the 3d TMs. The electronic properties of 3d TMs on the two tetrahedral interstitial sites differ even more: the TMs surrounded tetrahedrally by four Si atoms experience a large crystal field splitting while the tetrahedral C environment does not give rise to a significant crystal field splitting at all. It is only in the latter case that high-spin configurations are predicted.

scholarly journals High spin polarization in epitaxial Fe4N thin films using Cr and Ag as buffer layers

2018 ◽  
Vol 112 (16) ◽  
pp. 162407 ◽  
Author(s):  
Hongshi Li ◽  
Xuan Li ◽  
Dongrin Kim ◽  
Gejian Zhao ◽  
Delin Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Spin Polarization ◽  
High Spin ◽  
Buffer Layers ◽  
High Spin Polarization
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