Quality-enhanced GaN epitaxial films on Si(111) substrates by in situ deposition of SiN on a three-dimensional GaN template
Keyword(s):
High-quality crack-free GaN epitaxial films were successfully grown on Si(111) substrates using metal–organic chemical vapor deposition by in situ depositing SiN on a 3-dimensional (3D) GaN template.
2007 ◽
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1995 ◽
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