In Situ Monitoring of Selective Copper Deposition Processes in a Metal-Organic Chemical Vapor Deposition Using Fourier-Transform Infrared Reflection-Absorption Spectroscopy

1995 ◽  
Vol 34 (Part 1, No. 5A) ◽  
pp. 2430-2439 ◽  
Author(s):  
Ken-ichi Hanaoka ◽  
Hiroshi Ohnishi ◽  
KunihideTachibana
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
In Situ Monitoring ◽  
Organic Chemical ◽  
Infrared Reflection Absorption Spectroscopy ◽  
Infrared Reflection ◽  
Metal Organic ◽  
Deposition Processes ◽  
Organic Chemical Vapor Deposition

Thermodynamic Constraints for the In Situ MOCVD Growth of Superconducting Tl-Ba-Ca-Cu-O Thin Films

1993 ◽  
Vol 335 ◽  
Author(s):  
William L. Holstein
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Mocvd Growth ◽  
Metal Organic ◽  
Deposition Processes ◽  
Organic Chemical Vapor Deposition

AbstractIn spite of several attempts, superconducting Tl-Ba-Ca-Cu-O thin films have not been successfully prepared in situ by metal organic chemical vapor deposition (MOCVD). Preparation of a phase by MOCVD requires that it be thermodynamically stable with respect to its decomposition into volatile species and other condensed phases. For MOCVD growth of Tl-Ba- Ca-Cu-O compounds in the presence of oxygen from reagents containing only C-H or C-H-O ligands, Tl2O(g) and TIOH(g) exhibit appreciable volatility. If reagents with ligands containing fluorine are used, the formation of volatile TIF(g) must also be considered. Thermodynamic data for these materials are compiled, and thermodynamic relationships between these gases, H2O(g) and HF(g) are established. The thermodynamic stability of TIOH(g) and TIF(g) makes the in situ growth of Tl-Ba-Ca-Cu-O compounds by MOCVD more difficult than their in situ growth by physical vapor deposition processes, for which Tl2O(g) is the only volatile TI-containing species present.

Quality-enhanced GaN epitaxial films on Si(111) substrates by in situ deposition of SiN on a three-dimensional GaN template

RSC Advances ◽  
2016 ◽  
Vol 6 (88) ◽  
pp. 84794-84800 ◽  
Author(s):  
Yunhao Lin ◽  
Meijuan Yang ◽  
Wenliang Wang ◽  
Zhiting Lin ◽  
Guoqiang Li
Keyword(s):  
Vapor Deposition ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Organic Chemical ◽  
3 Dimensional ◽  
In Situ Deposition ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

High-quality crack-free GaN epitaxial films were successfully grown on Si(111) substrates using metal–organic chemical vapor deposition by in situ depositing SiN on a 3-dimensional (3D) GaN template.

In situ single-liquid-source metal-organic chemical vapor deposition of (La0.8Ca0.2)MnO3 giant magnetoresistive films

1995 ◽  
Vol 10 (9) ◽  
pp. 2166-2169 ◽  
Author(s):  
Y.Q. Li ◽  
J. Zhang ◽  
S. Pombrik ◽  
S. DiMascio ◽  
W. Stevens ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Organic Solution ◽  
Liquid Source ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

A large magnetoresistance change (ΔR/RH) of −550% has been observed at 270 K in (La0.8Ca0.2)MnO3 thin films. The films were prepared in situ on LaAlO3 substrates by single-liquid-source metal-organic chemical vapor deposition. M(thd)n (M = La, Ca, and Mn, and n = 2, 3) were dissolved together in an organic solution and used as precursors for the deposition of (La0.8Ca0.2)MnO3 thin films. Deposition was conducted at an oxygen partial pressure of 1.2 Torr and a substrate temperature ranging from 600 °C to 700 °C. The mechanism for the large magnetoresistance change in this manganese oxide is briefly discussed.

In situ X-ray studies of metal organic chemical vapor deposition of PbZrxTi1−xO3

2007 ◽  
Vol 515 (14) ◽  
pp. 5593-5596 ◽  
Author(s):  
R.-V. Wang ◽  
F. Jiang ◽  
D.D. Fong ◽  
G.B. Stephenson ◽  
P.H. Fuoss ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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