Enhancement of anisotropic thermoelectric performance of tungsten disulfide by titanium doping

2016 ◽  
Vol 4 (26) ◽  
pp. 10159-10165 ◽  
Author(s):  
Zhiwei Huang ◽  
Tianmin Wu ◽  
Shuang Kong ◽  
Qing-Long Meng ◽  
Wei Zhuang ◽  
...  

Using a facile doping strategy, the thermoelectric performance of tungsten disulfide is enhanced up to 70 times. Our study will stimulate further exploration of the potential applications in thermoelectrics for transition metal dichalcogenide semiconductors and other two-dimensional materials.

Nanoscale ◽  
2015 ◽  
Vol 7 (44) ◽  
pp. 18392-18401 ◽  
Author(s):  
L. M. Xie

Alloying allows broad band gap engineering and more for two-dimensional materials.


2020 ◽  
Vol 22 (30) ◽  
pp. 17385-17393
Author(s):  
Zeynep Ezgi Eroglu ◽  
Olivia Comegys ◽  
Leo S. Quintanar ◽  
Nurul Azam ◽  
Salah Elafandi ◽  
...  

Excitons in two-dimensional transition metal dichalcogenide monolayers (2D-TMDs) are of essential importance due to their key involvement in 2D-TMD-based applications.


2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Battulga Munkhbat ◽  
Andrew B. Yankovich ◽  
Denis G. Baranov ◽  
Ruggero Verre ◽  
Eva Olsson ◽  
...  

Abstract The ability to extract materials just a few atoms thick has led to the discoveries of graphene, monolayer transition metal dichalcogenides (TMDs), and other important two-dimensional materials. The next step in promoting the understanding and utility of flatland physics is to study the one-dimensional edges of these two-dimensional materials as well as to control the edge-plane ratio. Edges typically exhibit properties that are unique and distinctly different from those of planes and bulk. Thus, controlling the edges would allow the design of materials with combined edge-plane-bulk characteristics and tailored properties, that is, TMD metamaterials. However, the enabling technology to explore such metamaterials with high precision has not yet been developed. Here we report a facile and controllable anisotropic wet etching method that allows scalable fabrication of TMD metamaterials with atomic precision. We show that TMDs can be etched along certain crystallographic axes, such that the obtained edges are nearly atomically sharp and exclusively zigzag-terminated. This results in hexagonal nanostructures of predefined order and complexity, including few-nanometer-thin nanoribbons and nanojunctions. Thus, this method enables future studies of a broad range of TMD metamaterials through atomically precise control of the structure.


2021 ◽  
Author(s):  
Maolin Yu ◽  
Chao Zhu ◽  
Yongmin He ◽  
Jiadong Zhou ◽  
Ying Xu ◽  
...  

Abstract Grain boundaries (GBs) are vital to crystal materials and their applications. Although the GBs in bulk and two-dimensional materials have been extensively studied, the polyline GBs prevalently forming in transition metal dichalcogenide monolayers by a sequence of folded segments remain a mystery. We visualize the large-area distribution of the polyline GBs in MoSe2 monolayers by means of a strain mapping method and unravel their structural origin using ab initio calculations combined with high-resolution atomic characterizations. Unlike normal GBs in two-dimensional materials with one type of dislocation cores, the polyline GBs consist of two basic elements—4|8 and 4|4|8 cores, whose alloying results in structural diversity and distinctly high stability due to relieved stress fields nearby. The defective polygons can uniquely migrate along the polyline GBs via the movement of single molybdenum atoms, unobtrusively giving the GBs their chameleon-like ‘colorful’ appearances. Furthermore, the polyline GBs can achieve useful functionalities such as intrinsic magnetism and highly active electrocatalysis.


Nano Letters ◽  
2020 ◽  
Vol 20 (7) ◽  
pp. 5111-5118 ◽  
Author(s):  
Carmen Rubio-Verdú ◽  
Antonio M. Garcı́a-Garcı́a ◽  
Hyejin Ryu ◽  
Deung-Jang Choi ◽  
Javier Zaldı́var ◽  
...  

RSC Advances ◽  
2021 ◽  
Vol 11 (21) ◽  
pp. 12866-12866
Author(s):  
Bhaskar Kaviraj ◽  
Dhirendra Sahoo

Retraction of ‘Physics of excitons and their transport in two dimensional transition metal dichalcogenide semiconductors’ by Bhaskar Kaviraj and Dhirendra Sahoo, RSC Adv., 2019, 9, 25439–25461, DOI: 10.1039/c9ra03769a.


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