The role of sulfur oxidation in controlling the electronic properties of sulfur-containing host molecules for phosphorescent organic light-emitting diodes

2017 ◽  
Vol 19 (19) ◽  
pp. 12002-12012 ◽  
Author(s):  
E. Varathan ◽  
V. Subramanian

Quantum chemical calculations have been used to quantify the effect of sulfur oxidation on the electronic properties of DBT based host molecules for PhOLEDs.

2019 ◽  
Vol 21 (19) ◽  
pp. 9740-9746
Author(s):  
Mohammad Babazadeh ◽  
Paul L. Burn ◽  
David M. Huang

Quantum-chemical calculations show that the direction of the transition dipole moment of organometallic phosphorescent emitters is sensitive to molecular geometry.


2016 ◽  
Vol 16 (11) ◽  
pp. 11603-11607
Author(s):  
Han Kyu Yoo ◽  
Ho Won Lee ◽  
Song Eun Lee ◽  
Hyun Jung Baek ◽  
Sungkyu Lee ◽  
...  

2012 ◽  
Vol 629 ◽  
pp. 224-228 ◽  
Author(s):  
Kwang Sik Kim ◽  
Young Wook Hwang ◽  
Tae Young Won

We report our finite element method (FEM) simulation study on the characteristic of the charge transport layer of the multi-layer structure for organic light emitting diodes (OLEDs). The physical model cover all the key physical processes in OLEDs, namely charge injection, transport and recombination, exciton diffusion, transfer and decay for electronic properties. We performed a numerical simulation on a multilayer structure comprising a hole transport layer (HTL), an emission layer (EML), and an electron transport layer (ETL) between both electrodes; anode and cathode. The materials of the HTL is TPD (N, N'-Bis (3- methylphenyl) - N, N'- bis (phenyl) benzidine), and the ETL includes Alq3 (Tris (8- hyroxyquinolinato) aluminium). Here, we investigated the parameters such as recombination rates which influence the efficiency of the charge transport between layers in bilayer OLEDs. We also analyzed a transient response during the turn on period and the carrier transport in accordance with the variation of the injection barrier and applied voltage. In addition, this paper revealed that the effect of the insertion of the EML in bilayer structure.


2004 ◽  
Vol 84 (15) ◽  
pp. 2913-2915 ◽  
Author(s):  
J. M. Zhao ◽  
S. T. Zhang ◽  
X. J. Wang ◽  
Y. Q. Zhan ◽  
X. Z. Wang ◽  
...  

2012 ◽  
Vol 51 (3) ◽  
pp. 601-613 ◽  
Author(s):  
Beatrice Ch. D. Salert ◽  
Hartmut Krueger ◽  
Sergey A. Bagnich ◽  
Thomas Unger ◽  
Frank Jaiser ◽  
...  

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