Metal-oxide assisted surface treatment of polyimide gate insulators for high-performance organic thin-film transistors

2017 ◽  
Vol 19 (23) ◽  
pp. 15521-15529 ◽  
Author(s):  
Sohee Kim ◽  
Taewook Ha ◽  
Sungmi Yoo ◽  
Jae-Won Ka ◽  
Jinsoo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Surface Treatment ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Gate Insulator ◽  
Self Assembled Monolayers ◽  
Organic Thin Film ◽  
Assembled Monolayers

We developed a facile method for treating polyimide-based organic gate insulator (OGI) surfaces with self-assembled monolayers (SAMs) by introducing metal-oxide interlayers, called the metal-oxide assisted SAM treatment (MAST).

High-performance organic thin-film transistors with metal oxide/metal bilayer electrode

2005 ◽  
Vol 87 (19) ◽  
pp. 193508 ◽  
Author(s):  
Chih-Wei Chu ◽  
Sheng-Han Li ◽  
Chieh-Wei Chen ◽  
Vishal Shrotriya ◽  
Yang Yang
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Bilayer Electrode

Crosslinked polymer-mixture gate insulator for high-performance organic thin-film transistors

2016 ◽  
Vol 36 ◽  
pp. 171-176 ◽  
Author(s):  
Yun-Seo Choe ◽  
Mi Hye Yi ◽  
Ji-Heung Kim ◽  
Gi-Seong Ryu ◽  
Yong-Young Noh ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Gate Insulator ◽  
Polymer Mixture ◽  
Organic Thin Film ◽  
Crosslinked Polymer
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