Self-Assembled Monolayers of Cyclohexyl-Terminated Phosphonic Acids as a General Dielectric Surface for High-Performance Organic Thin-Film Transistors

2014 ◽  
Vol 26 (42) ◽  
pp. 7190-7196 ◽  
Author(s):  
Danqing Liu ◽  
Zikai He ◽  
Yaorong Su ◽  
Ying Diao ◽  
Stefan C. B. Mannsfeld ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Dielectric Surface ◽  
Organic Thin Film Transistors ◽  
Self Assembled Monolayers ◽  
Organic Thin Film ◽  
Phosphonic Acids ◽  
Assembled Monolayers ◽  
Self Assembled

Metal-oxide assisted surface treatment of polyimide gate insulators for high-performance organic thin-film transistors

2017 ◽  
Vol 19 (23) ◽  
pp. 15521-15529 ◽  
Author(s):  
Sohee Kim ◽  
Taewook Ha ◽  
Sungmi Yoo ◽  
Jae-Won Ka ◽  
Jinsoo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Surface Treatment ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Gate Insulator ◽  
Self Assembled Monolayers ◽  
Organic Thin Film ◽  
Assembled Monolayers

We developed a facile method for treating polyimide-based organic gate insulator (OGI) surfaces with self-assembled monolayers (SAMs) by introducing metal-oxide interlayers, called the metal-oxide assisted SAM treatment (MAST).

Organic Thin-Film Transistors: The Passivation of the Dielectric-Pentacene Interface by Dipolar Self-Assembled Monolayers

Langmuir ◽  
2010 ◽  
Vol 26 (18) ◽  
pp. 15044-15049 ◽  
Author(s):  
Franziska D. Fleischli ◽  
Stéphane Suárez ◽  
Michel Schaer ◽  
Libero Zuppiroli
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Self Assembled Monolayers ◽  
Organic Thin Film ◽  
Assembled Monolayers ◽  
Self Assembled
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