scholarly journals Tin(iv) chalcogenoether complexes as single source precursors for the chemical vapour deposition of SnE2 and SnE (E = S, Se) thin films

2018 ◽  
Vol 47 (8) ◽  
pp. 2628-2637 ◽  
Author(s):  
Chitra Gurnani ◽  
Samantha L. Hawken ◽  
Andrew L. Hector ◽  
Ruomeng Huang ◽  
Marek Jura ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Single Source ◽  
Single Source Precursors ◽  
Distorted Octahedral

Distorted octahedral complexes of Sn(iv) with thio- and seleno-ether ligands have been used as single source precursors in low pressure CVD experiments under various conditions to deposit tin mono and dichalcogenide thin films.

scholarly journals Chalcogenoether complexes of Nb(v) thio- and seleno-halides as single source precursors for low pressure chemical vapour deposition of NbS2 and NbSe2 thin films

2017 ◽  
Vol 46 (30) ◽  
pp. 9824-9832 ◽  
Author(s):  
Yao-Pang Chang ◽  
Andrew L. Hector ◽  
William Levason ◽  
Gillian Reid
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Single Source ◽  
Single Source Precursors ◽  
Pressure Chemical

A series of thioether complexes of NbSCl3 has been prepared and selected examples demonstrated as precursors to 3R-NbS2 films; deposition of 2H-NbSe2 from [NbSe2Cl3(SenBu2)] is also reported.

scholarly journals Low Pressure Chemical Vapour Deposition of Crystalline Ga2Te3 and Ga2Se3 Thin Films from Single Source Precursors Using Telluroether and Selenoether Complexes

2013 ◽  
Vol 46 ◽  
pp. 142-148 ◽  
Author(s):  
Kathryn George ◽  
C. H. (Kees) de Groot ◽  
Chitra Gurnani ◽  
Andrew L. Hector ◽  
Ruomeng Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Single Source ◽  
Single Source Precursors ◽  
Pressure Chemical

Chemical vapour deposition of II–VI semiconductor thin films using M[(TePiPr2)2N]2(M = Cd, Hg) as single-source precursors

2006 ◽  
Vol 16 (10) ◽  
pp. 966-969 ◽  
Author(s):  
Shivram S. Garje ◽  
Jamie S. Ritch ◽  
Dana J. Eisler ◽  
Mohammad Afzaal ◽  
Paul O'Brien ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors ◽  
Semiconductor Thin Films

scholarly journals Combining single source chemical vapour deposition precursors to explore the phase space of titanium oxynitride thin films

2018 ◽  
Vol 47 (31) ◽  
pp. 10536-10543 ◽  
Author(s):  
Kelly Rees ◽  
Emanuela Lorusso ◽  
Samuel D. Cosham ◽  
Alexander N. Kulak ◽  
Geoffrey Hyett
Keyword(s):  
Thin Films ◽  
Phase Space ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors

Combining single-source precursors in aerosol assisted CVD allows control of the composition of mixed anion titanium oxynitride thin films.

scholarly journals Synthesis and properties of MoCl4complexes with thio- and seleno-ethers and their use for chemical vapour deposition of MoSe2and MoS2films

2018 ◽  
Vol 47 (7) ◽  
pp. 2406-2414 ◽  
Author(s):  
Yao-Pang Chang ◽  
Andrew L. Hector ◽  
William Levason ◽  
Gillian Reid ◽  
Joshua Whittam
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Chloride Complexes ◽  
Single Source Precursors

A new series of Mo(iv) chloride complexes with thioether and seleneoether ligands is reported; [MoCl4(nBu2E)2] (E = S, Se) function as single source precursors for the CVD of MoE2thin films.

Heterocyclic lead(II) thioureato complexes as single-source precursors for the aerosol assisted chemical vapour deposition of PbS thin films

2018 ◽  
Vol 479 ◽  
pp. 42-48 ◽  
Author(s):  
Kevin I.Y. Ketchemen ◽  
Sixberth Mlowe ◽  
Linda D. Nyamen ◽  
Ahmed A. Aboud ◽  
Matthew P. Akerman ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors

Homoleptic zirconium amidates: single source precursors for the aerosol-assisted chemical vapour deposition of ZrO2

2016 ◽  
Vol 4 (45) ◽  
pp. 10731-10739 ◽  
Author(s):  
Amanda L. Catherall ◽  
Michael S. Hill ◽  
Andrew L. Johnson ◽  
Gabriele Kociok-Köhn ◽  
Mary F. Mahon
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors ◽  
Single Source Precursor ◽  
Original Family

We report the development of a true single source precursor for the growth of zirconia thin films by aerosol-assisted chemical vapour deposition using an original family of zirconium(iv) amidate derivatives.

scholarly journals Chemical vapour deposition of rhenium disulfide and rhenium-doped molybdenum disulfide thin films using single-source precursors

2016 ◽  
Vol 4 (12) ◽  
pp. 2312-2318 ◽  
Author(s):  
Naktal Al-Dulaimi ◽  
David J. Lewis ◽  
Xiang Li Zhong ◽  
M. Azad Malik ◽  
Paul O'Brien
Keyword(s):  
Thin Films ◽  
Molybdenum Disulfide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors ◽  
Polycrystalline Thin Films

Polycrystalline thin films of rhenium disulfide (ReS2) and the alloys Mo1−xRexS2 (0 ≤ x ≤ 0.06) have been deposited by aerosol-assisted chemical vapour deposition (AA-CVD) using [Re(μ-SiPr)3(SiPr)6] and [Mo(S2CNEt2)4] at 475 °C.

scholarly journals Heterocyclic dithiocarbamato-iron(iii) complexes: single-source precursors for aerosol-assisted chemical vapour deposition (AACVD) of iron sulfide thin films

2016 ◽  
Vol 45 (6) ◽  
pp. 2647-2655 ◽  
Author(s):  
Sixberth Mlowe ◽  
David J. Lewis ◽  
Mohammad Azad Malik ◽  
James Raftery ◽  
Egid B. Mubofu ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Iron Sulfide ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors

A series of iron(iii) heterocyclic dithiocarbamate complexes were synthesized and characterized and were used as single source precursors to deposit iron sulfide thin films.

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