scholarly journals Band gap opening of bilayer graphene by graphene oxide support doping

RSC Advances ◽  
2017 ◽  
Vol 7 (16) ◽  
pp. 9862-9871 ◽  
Author(s):  
Shaobin Tang ◽  
Weihua Wu ◽  
Xiaojun Xie ◽  
Xiaokang Li ◽  
Junjing Gu
Keyword(s):  
Graphene Oxide ◽  
Band Gap ◽  
Bilayer Graphene ◽  
Monolayer Graphene ◽  
Graphene Oxides ◽  
Oxide Support ◽  
Gap Opening

In contrast to the metallic monolayer graphene by graphene oxides (GOs) doping, the sizable band gap of bilayer graphene is opened by GOs.

Large and tunable thermoelectric effect in single layer graphene on bilayer graphene

2015 ◽  
Vol 29 (03) ◽  
pp. 1550003 ◽  
Author(s):  
Z. Z. Alisultanov
Keyword(s):  
Simple Model ◽  
Band Gap ◽  
Single Layer ◽  
Bilayer Graphene ◽  
Single Layer Graphene ◽  
Monolayer Graphene ◽  
Thermoelectric Effect ◽  
Layer Graphene ◽  
Trilayer Graphene

The conductivity and thermopower of a trilayer graphene based system have been studied within the framework of a simple model. It has been shown that kinks of the conductivity and peaks of the thermopower of the monolayer graphene formed on a tunable bilayer graphene appear near the edges of the band gap of the tunable bilayer graphene.

Effects of band gap opening on an n–p–n bilayer graphene junction

2011 ◽  
Vol 43 (5) ◽  
pp. 1061-1064 ◽  
Author(s):  
Chaipattana Saisa-ard ◽  
I. Ming Tang ◽  
Rassmidara Hoonsawat
Keyword(s):  
Band Gap ◽  
Bilayer Graphene ◽  
Gap Opening

scholarly journals Molecular Doping and Band-Gap Opening of Bilayer Graphene

ACS Nano ◽  
2013 ◽  
Vol 7 (3) ◽  
pp. 2790-2799 ◽  
Author(s):  
Alexander J. Samuels ◽  
J. David Carey
Keyword(s):  
Band Gap ◽  
Bilayer Graphene ◽  
Gap Opening ◽  
Molecular Doping

Electronic transport and shot noise in a Thue–Morse bilayer graphene superlattice with interlayer potential bias

2016 ◽  
Vol 30 (16) ◽  
pp. 1650181 ◽  
Author(s):  
Yuanqiao Li ◽  
Hongmei Zhang ◽  
De Liu
Keyword(s):  
Band Gap ◽  
Transmission Coefficient ◽  
Energy Band ◽  
Normal Incidence ◽  
Fano Factor ◽  
Bilayer Graphene ◽  
Potential Bias ◽  
Energy Band Gap ◽  
Gap Opening ◽  
Graphene Superlattice

In this paper, we evaluate the transport properties of a Thue–Morse AB-stacked bilayer graphene superlattice with different interlayer potential biases. Based on the transfer matrix method, the transmission coefficient, the conductance, and the Fano factor are numerically calculated and discussed. We find that the symmetry of the transmission coefficient with respect to normal incidence depends on the structural symmetry of the system and the new transmission peak appears in the energy band gap opening region. The conductance and the Fano factor can be greatly modulated not only by the Fermi energy and the interlayer potential bias but also by the generation number. Interestingly, the conductance exhibits the plateau of almost zero conductance and the Fano factor plateaus with Poisson value occur in the energy band gap opening region for large interlayer potential bias.

Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC

2011 ◽  
Vol 1283 ◽  
Author(s):  
Shinichi Tanabe ◽  
Yoshiaki Sekine ◽  
Hiroyuki Kageshima ◽  
Masao Nagase ◽  
Hiroki Hibino
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Bilayer Graphene ◽  
Monolayer Graphene ◽  
Strong Temperature Dependence ◽  
Electronic Transport Properties ◽  
Integer Quantum Hall Effect ◽  
Gap Opening ◽  
Integer Quantum ◽  
Graphene Devices

ABSTRACTWe studied the electronic transport properties of monolayer and bilayer graphene in top-gated geometries. Monolayer and bilayer graphene were epitaxially grown by thermal decomposition of SiC. The half-integer quantum Hall effect under the gated environment was observed in monolayer graphene devices. The mobility of the monolayer and bilayer graphene devices showed distinct characteristics as a function of carrier density, which reflect their electronic structures. Strong temperature dependence at the charge neutrality point was observed in bilayer graphene devices, suggesting band gap opening.

scholarly journals Isothermal growth and stacking evolution in highly uniform AB-stacked bilayer graphene

2019 ◽  
Author(s):  
Pablo Solís-Fernández ◽  
Yuri Terao ◽  
Kenji Kawahara ◽  
Kosuke Nagashio ◽  
Yung-Chang Lin ◽  
...  
Keyword(s):  
Band Gap ◽  
Chemical Vapour ◽  
Bilayer Graphene ◽  
Inhomogeneous Layer ◽  
Electrical Measurements ◽  
Large Area ◽  
Carbon Dissolution ◽  
Stacking Order ◽  
New Strategy ◽  
Gap Opening

Controlling the stacking order in bilayer graphene (BLG) allows realising unique physical properties. In particular, the possibility of tuning the band gap in AB-stacked BLG (AB-BLG) has a great technological importance for electronic and optoelectronics applications. Most of current methods to produce AB-BLG suffer from inhomogeneous layer thickness and/or coexistence with twisted BLG. Here, we demonstrate a method to synthesise highly pure large-area AB-BLG by chemical vapour deposition (CVD) using Cu-Ni films. Increasing the reaction time resulted in a gradual increase of the AB stacking, with the BLG eventually free from twist regions for the longer times (99.4 % of BLG has AB stacking), due to catalyst-assisted continuous BLG reconstruction driven by carbon dissolution-segregation processes. The band gap opening was confirmed by the electrical measurements. The concept of the continuous reconstruction to achieve highly pure AB-BLG offers a new strategy to control the stacking order of catalytically grown two-dimensional materials.

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