Effects of band gap opening on an n–p–n bilayer graphene junction

In this paper, we evaluate the transport properties of a Thue–Morse AB-stacked bilayer graphene superlattice with different interlayer potential biases. Based on the transfer matrix method, the transmission coefficient, the conductance, and the Fano factor are numerically calculated and discussed. We find that the symmetry of the transmission coefficient with respect to normal incidence depends on the structural symmetry of the system and the new transmission peak appears in the energy band gap opening region. The conductance and the Fano factor can be greatly modulated not only by the Fermi energy and the interlayer potential bias but also by the generation number. Interestingly, the conductance exhibits the plateau of almost zero conductance and the Fano factor plateaus with Poisson value occur in the energy band gap opening region for large interlayer potential bias.

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Isothermal growth and stacking evolution in highly uniform AB-stacked bilayer graphene

10.26434/chemrxiv.11459316.v1 ◽

2019 ◽

Author(s):

Pablo Solís-Fernández ◽

Yuri Terao ◽

Kenji Kawahara ◽

Kosuke Nagashio ◽

Yung-Chang Lin ◽

...

Keyword(s):

Band Gap ◽

Chemical Vapour ◽

Bilayer Graphene ◽

Inhomogeneous Layer ◽

Electrical Measurements ◽

Large Area ◽

Carbon Dissolution ◽

Stacking Order ◽

New Strategy ◽

Gap Opening

Controlling the stacking order in bilayer graphene (BLG) allows realising unique physical properties. In particular, the possibility of tuning the band gap in AB-stacked BLG (AB-BLG) has a great technological importance for electronic and optoelectronics applications. Most of current methods to produce AB-BLG suffer from inhomogeneous layer thickness and/or coexistence with twisted BLG. Here, we demonstrate a method to synthesise highly pure large-area AB-BLG by chemical vapour deposition (CVD) using Cu-Ni films. Increasing the reaction time resulted in a gradual increase of the AB stacking, with the BLG eventually free from twist regions for the longer times (99.4 % of BLG has AB stacking), due to catalyst-assisted continuous BLG reconstruction driven by carbon dissolution-segregation processes. The band gap opening was confirmed by the electrical measurements. The concept of the continuous reconstruction to achieve highly pure AB-BLG offers a new strategy to control the stacking order of catalytically grown two-dimensional materials.

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Enhancement of Electron–Phonon Interaction by Band-Gap Opening in Bilayer Graphene

Journal of the Physical Society of Japan ◽

10.7566/jpsj.83.034703 ◽

2014 ◽

Vol 83 (3) ◽

pp. 034703 ◽

Cited By ~ 2

Author(s):

Yusuke Yamashiro ◽

Koichi Inoue ◽

Yasuhide Ohno ◽

Kenzo Maehashi ◽

Kazuhiko Matsumoto

Keyword(s):

Band Gap ◽

Bilayer Graphene ◽

Phonon Interaction ◽

Electron Phonon Interaction ◽

Gap Opening

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BAND GAP OPENING EFFECT ON THE TRANSPORT PROPERTIES OF BILAYER GRAPHENE SUPERLATTICE

International Journal of Modern Physics B ◽

10.1142/s0217979213500240 ◽

2013 ◽

Vol 27 (08) ◽

pp. 1350024 ◽

Cited By ~ 8

Author(s):

FARHAD SATTARI ◽

EDRIS FAIZABADI

Keyword(s):

Band Gap ◽

Electronic Transport ◽

Incident Angle ◽

Transmission Probability ◽

Bilayer Graphene ◽

Oscillatory Behavior ◽

Charge Carriers ◽

Barrier Region ◽

Gap Opening ◽

Graphene Superlattice

We have investigated electronic transport of charge carriers in a gapped bilayer graphene superlattice (GBGS), based on transfer matrix method. We have found that conductivity of the system has an oscillatory behavior respect to the gap value. As the gap value is simply changeable by external voltage in bilayer graphene, the conductivity can be controlled by gate voltage. It also has been shown that transmission probability for normal incident angle depends on barrier width in presence of band gap within barrier region. As a result, a GBGS behaves very differently compared to a gapless bilayer graphene superlattice.

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