Cost effective perovskite solar cells with a high efficiency and open-circuit voltage based on a perovskite-friendly carbon electrode

2018 ◽  
Vol 6 (18) ◽  
pp. 8271-8279 ◽  
Author(s):  
Qian-Qian Chu ◽  
Bin Ding ◽  
Qi Qiu ◽  
Yan Liu ◽  
Cheng-Xin Li ◽  
...  

The dissolution of perovskite films with perovskite-friendly carbon paste was avoided, resulting in high efficiency of perovskite solar cells.

2018 ◽  
Vol 6 (37) ◽  
pp. 18010-18017 ◽  
Author(s):  
Jiehuan Chen ◽  
Xiaomei Lian ◽  
Yingzhu Zhang ◽  
Weitao Yang ◽  
Jun Li ◽  
...  

High efficiency (12.07%) 2D perovskite solar cells with a high open-circuit voltage above 1.23 V are realized via interface engineering.


2020 ◽  
Vol 8 (23) ◽  
pp. 11859-11866 ◽  
Author(s):  
Yafeng Xu ◽  
Jialong Duan ◽  
Xiya Yang ◽  
Jian Du ◽  
Yudi Wang ◽  
...  

The electron-transporting layer (ETL) plays a non-negligible role in determining the charge extraction and transfer behaviors from perovskite films under solar irradiation for high efficiency perovskite solar cells.


2021 ◽  
Author(s):  
Ying Hu ◽  
Jiaping Wang ◽  
Peng Zhao ◽  
Zhenhua Lin ◽  
Siyu Zhang ◽  
...  

Abstract Due to excellent thermal stability and optoelectronic properties, all-inorganic perovskite is one of the promising candidates to solve the thermal decomposition problem of conventional organic-inorganic hybrid perovskite solar cells (PSCs), but the larger voltage loss (V loss) cannot be ignored, especially CsPbIBr2, which limits the improvement of efficiency. To reduce the V loss, one promising solution is the modification of the energy level alignment between perovskite layer and adjacent charge transport layer (CTL), which can facilitate charge extraction and reduce carrier recombination rate at perovskite/CTL interface. Therefore, the key issues of minimum V loss and high efficiency of CsPbIBr2-based PSCs were studied in terms of the perovskite layer thickness, the effects of band offset of CTL/perovskite layer, the doping concentration of the CTL, and the electrode work function in this study based on device simulations. The open-circuit voltage (V oc) is increased from 1.37 V to 1.52 V by replacing SnO2 with ZnO as electron transport layer (ETL) due to more matching conduction band with CsPbIBr2 layer.


2017 ◽  
Vol 1 (9) ◽  
pp. 1935-1943 ◽  
Author(s):  
Bat-El Cohen ◽  
Malgorzata Wierzbowska ◽  
Lioz Etgar

A power conversion efficiency of 9.5% and an open circuit voltage of more than 1.4 V were achieved for bromide-based quasi 2D perovskite solar cells.


Author(s):  
Pietro Caprioglio ◽  
Fengshuo Zu ◽  
Christian M. Wolff ◽  
Martin Stolterfhot ◽  
Norbert Koch ◽  
...  

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 592
Author(s):  
Myeong Sang Jeong ◽  
Yonghwan Lee ◽  
Ka-Hyun Kim ◽  
Sungjin Choi ◽  
Min Gu Kang ◽  
...  

In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell; hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘C to 950 ∘C. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. Simulations showed that the increase in the distribution of Ag crystallites and surface recombination velocity at the silicon-metal interface played an important role in the decrease of open-circuit voltage of the PERC solar cell at temperatures of 850–900 ∘C, whereas the damage caused by the emitter over fire was determined as the main cause of the voltage drop at 950 ∘C. These results are expected to serve as a steppingstone for further research on improvement in the silicon-metal interface properties of silicon-based solar cells and investigation on high-efficiency solar cells.


Solar RRL ◽  
2021 ◽  
Author(s):  
Nathan Daem ◽  
Jennifer Dewalque ◽  
Felix Lang ◽  
Anthony Maho ◽  
Gilles Spronck ◽  
...  

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