Effects of graphene/BN encapsulation, surface functionalization and molecular adsorption on the electronic properties of layered InSe: a first-principles study
2018 ◽
Vol 20
(18)
◽
pp. 12939-12947
◽
Keyword(s):
A proper adoption of the n- or p-type dopants allows for the modulation of the work function, the Fermi level pinning, the band bending, and the photo-adsorbing efficiency near the InSe surface/interface.
2008 ◽
Vol 85
(1)
◽
pp. 2-8
◽
Keyword(s):
Keyword(s):
2017 ◽
Vol 5
(3)
◽
pp. 683-689
◽
Keyword(s):
Keyword(s):
2019 ◽
Vol 58
(SC)
◽
pp. SCCB35
◽
Keyword(s):
2021 ◽
Vol 702
(1)
◽
pp. 012022