Enhancement of polaron-hopping-based a.c. conduction in semiconducting STS (Se–Te–Sn) glass by silver incorporation

AbstractVanadium oxide deposited in thin layers from aqueous colloidal dispersions exhibits electronic conductivity by a small polaron hopping conduction mechanism. Conductivity and static dissipative properties of coatings are unaffected by changes in humidity. Because vanadium oxide is highly colored, the deposition of effective antistatic coatings which are transparent and colorless requires that the percolative (networking forming) properties of the colloidal particles be maximized. The percolative properties of the colloid are strongly influenced by morphology of the dispersed particles and the extent to which they are well dispersed in the aquasol. These properties are determined by the synthetic route to the colloid. Vanadium oxide is the most potent antistatic agent known and has been found to provide antistatic properties even when as little as 1 milligram per square meter is used.

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Charged defect states in intrinsic hydrogenated amorphous silicon films

Journal of Applied Physics ◽

10.1063/1.357645 ◽

1994 ◽

Vol 76 (4) ◽

pp. 2260-2263 ◽

Cited By ~ 40

Author(s):

Mehmet Güneş ◽

Christopher R. Wronski ◽

T. J. McMahon

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Silicon Films ◽

Charged Defect ◽

Defect States ◽

Hydrogenated Amorphous

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Study of defect states in a-Se85Te15−xPbx thin films by space charge limited conduction mechanism

Journal of Materials Science ◽

10.1007/s10853-006-1407-7 ◽

2007 ◽

Vol 42 (8) ◽

pp. 2712-2716 ◽

Cited By ~ 10

Author(s):

V. S. Kushwaha ◽

A. Kumar

Keyword(s):

Thin Films ◽

Space Charge ◽

Conduction Mechanism ◽

Defect States ◽

Space Charge Limited Conduction ◽

Limited Conduction ◽

Space Charge Limited

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Highly conductive barium iron vanadate glass containing different metal oxides

Pure and Applied Chemistry ◽

10.1515/pac-2016-0916 ◽

2017 ◽

Vol 89 (4) ◽

pp. 419-428 ◽

Cited By ~ 6

Author(s):

Tetsuaki Nishida ◽

Yukimi Izutsu ◽

Mina Fujimura ◽

Keito Osouda ◽

Yuki Otsuka ◽

...

Keyword(s):

Metal Oxides ◽

Conduction Mechanism ◽

Marked Decrease ◽

Small Polaron ◽

Electric Resistivity ◽

Electron Configuration ◽

Polaron Hopping ◽

Vanadate Glass ◽

Type Semiconductor ◽

Vanadate Glasses

Abstract20BaO·5ZnO·5Fe2O3·70V2O5 glass annealed at 450°C for 30 min showed a marked decrease in the electric resistivity (ρ) from 4.0×105 to 4.8 Ωcm, while 20BaO·5Cu2O·5Fe2O3·70V2O5 glass from 2.0×105 to 5.0 Ωcm. As for the conduction mechanism, it proved that n-type semiconductor model in conjugation with the small polaron hopping theory was most probable. Since ZnII and CuI have a 3d10-electron configuration in the outer-most orbital, Ga2O3- and GeO2-containing vanadate glasses were explored in this study. 20BaO·5Ga2O3·5Fe2O3·70V2O5 glass showed a less remarkable decrease of ρ from 4.5×105 to 100 Ωcm, and 20BaO·5GeO2·5Fe2O3·70V2O5 glass from 3.3×106 to 400 Ωcm. Activation energies for the conduction (Ea) of GeO2- and Ga2O3-contaning glasses before the annealing were respectively estimated to be 0.42 and 0.41 eV. It proved that barium iron vanadate glass with a smaller Ea value could attain the higher conductivity after the annealing at temperaures higher than the crystalization temperature.

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