Large-scale transfer-free growth of thin graphite films at low temperature for solid diffusion barriers

Nanoscale ◽  
2018 ◽  
Vol 10 (31) ◽  
pp. 14819-14823
Author(s):  
Su Hyoung Kang ◽  
Sangmin Kang ◽  
Seong Chae Park ◽  
Jong Bo Park ◽  
Youngjin Jung ◽  
...  
Keyword(s):  
Thin Film Transistors ◽  
Large Scale ◽  
Diffusion Barriers ◽  
Indium Gallium Zinc Oxide ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Active Matrix ◽  
Solid Diffusion ◽  
Indium Gallium ◽  
Free Growth

Amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) have been under intense investigation as one of the promising candidates for active matrix flat-panel displays.

Inverters Using Only N-Type Indium Gallium Zinc Oxide Thin Film Transistors for Flat Panel Display Applications

2011 ◽  
Vol 50 (3) ◽  
pp. 03CB06 ◽  
Author(s):  
Tong-Hun Hwang ◽  
Ik-Seok Yang ◽  
Oh-Kyong Kwon ◽  
Min-Ki Ryu ◽  
Choon-Won Byun ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Flat Panel Display ◽  
Zinc Oxide Thin Film ◽  
Flat Panel ◽  
Indium Gallium

Attempts to Apply Thin Film Transistors to Electroluminescent Displays

1984 ◽  
Vol 33 ◽  
Author(s):  
M. Robert Miller
Keyword(s):  
Thin Film ◽  
Problem Solving ◽  
Thin Film Transistors ◽  
Flat Panel Displays ◽  
Huge Amount ◽  
Flat Panel ◽  
Active Matrix ◽  
Display Devices ◽  
The Subject ◽  
Problem Solving Process

ABSTRACTThe objectives of the two programs described here were to develop fabrication processes for flat panel displays using an active matrix of thin film transistors (TFT) behind an electroluminescent (EL) display medium. The programs were carried out under ERADCOM contracts DAAB07-76-C-0027 with Westinghouse R&D Center and DAAB-07-77-C-0583 with Aerojet Electrosystems Company. The huge amount of information about the processes and technology generated through the efforts of capable and dedicated people who worked on these programs was, in spite of everything, not enough to achieve the stated objectives. The fabrication processes developed did not result in repeatable, reliable display devices. The solutions applied to one set of problems tended to uncover new problems previously unseen, but this continual problem solving process probably generated more information about the technology than results from many programs in which the goals are achieved. The improved understanding of TFT processes and applicability is the subject of this report.

Inverters Using Only N-Type Indium Gallium Zinc Oxide Thin Film Transistors for Flat Panel Display Applications

2011 ◽  
Vol 50 (3S) ◽  
pp. 03CB06 ◽  
Author(s):  
Tong-Hun Hwang ◽  
Ik-Seok Yang ◽  
Oh-Kyong Kwon ◽  
Min-Ki Ryu ◽  
Choon-Won Byun ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Flat Panel Display ◽  
Zinc Oxide Thin Film ◽  
Flat Panel ◽  
Indium Gallium

High Sensitivity pH Sensors based on Amorphous Indium-gallium-zinc Oxide Thin-film Transistors

2015 ◽  
Vol 135 (6) ◽  
pp. 192-198 ◽  
Author(s):  
Shinnosuke Iwamatsu ◽  
Yutaka Abe ◽  
Toru Yahagi ◽  
Seiya Kobayashi ◽  
Kazushige Takechi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Sensitivity ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Ph Sensors ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications

2021 ◽  
Vol 42 (3) ◽  
pp. 031101
Author(s):  
Ying Zhu ◽  
Yongli He ◽  
Shanshan Jiang ◽  
Li Zhu ◽  
Chunsheng Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium
Sign in / Sign up

Export Citation Format

Share Document