Attempts to Apply Thin Film Transistors to Electroluminescent Displays

1984 ◽  
Vol 33 ◽  
Author(s):  
M. Robert Miller

ABSTRACTThe objectives of the two programs described here were to develop fabrication processes for flat panel displays using an active matrix of thin film transistors (TFT) behind an electroluminescent (EL) display medium. The programs were carried out under ERADCOM contracts DAAB07-76-C-0027 with Westinghouse R&D Center and DAAB-07-77-C-0583 with Aerojet Electrosystems Company. The huge amount of information about the processes and technology generated through the efforts of capable and dedicated people who worked on these programs was, in spite of everything, not enough to achieve the stated objectives. The fabrication processes developed did not result in repeatable, reliable display devices. The solutions applied to one set of problems tended to uncover new problems previously unseen, but this continual problem solving process probably generated more information about the technology than results from many programs in which the goals are achieved. The improved understanding of TFT processes and applicability is the subject of this report.

1997 ◽  
Vol 296 (1-2) ◽  
pp. 133-136 ◽  
Author(s):  
L. Pichon ◽  
F. Raoult ◽  
K. Mourgues ◽  
K. Kis-Sion ◽  
T. Mohammed-Brahim ◽  
...  

1999 ◽  
Vol 557 ◽  
Author(s):  
J.P. Lu ◽  
P. Mei ◽  
C. Chua ◽  
J. Ho ◽  
Y. Wang ◽  
...  

AbstractWe have successfully used self-aligned Amorphous Si Thin-Film Transistors, fabricated by a laser doping/annealing process, to construct dynamic shift register circuits, which can be used as gate-line drivers or in other peripheral circuits for flat-panel displays and imagers. Taking advantage of easily scaling down the TFT channel length in a self-aligned process, much higher circuit speeds can be achieved compared to that of circuits using conventional TFTs. We have successfully demonstrated a four-phase dynamic shift register, operating at a clock speed higher that 250 kHz (1 μs for each clock phase) built on 3 μm channel length TFTs. This new technology opens up possibilities for integrating peripheral circuits in flat-panel displays and imagers based on a-Si TFTs.


1990 ◽  
Vol 182 ◽  
Author(s):  
B.-C. Hseih ◽  
G.A. Hawkins ◽  
S. Ashok

AbstractWe report on the characteristics of polycrystalline silicon (polysilicon) thin film transistors (TFTs) fabricated with low temperature crystallized LPCVD amorphous silicon film as an active layer and plasma enhanced chemical vapor deposition (PECVD) SiO2 as a gate insulator. High performance transistor characteristics are achieved, even though no process temperature exceeds 600°C. No threshold drift has been observed. As a result, these devices are highly suitable for application to image scanners as well as flat panel displays.


Nanoscale ◽  
2018 ◽  
Vol 10 (31) ◽  
pp. 14819-14823
Author(s):  
Su Hyoung Kang ◽  
Sangmin Kang ◽  
Seong Chae Park ◽  
Jong Bo Park ◽  
Youngjin Jung ◽  
...  

Amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) have been under intense investigation as one of the promising candidates for active matrix flat-panel displays.


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