scholarly journals Mid-infrared GaAs/AlGaAs micro-ring resonators characterized via thermal tuning

RSC Advances ◽  
2019 ◽  
Vol 9 (15) ◽  
pp. 8594-8599 ◽  
Author(s):  
Julian Haas ◽  
Philipp Artmann ◽  
Boris Mizaikoff

Micro-ring resonators with a decoupling waveguide have been fabricated from thin-film GaAs/Al0.2Ga0.8As waveguides accommodating mid-infrared wavelengths, and were characterized in detail via thermal tuning.

Author(s):  
Michele Martinazzo ◽  
Davide Magurno ◽  
William Cossich ◽  
Carmine Serio ◽  
Guido Masiello ◽  
...  

2016 ◽  
Vol 213 (8) ◽  
pp. 2117-2123 ◽  
Author(s):  
Ángela I. López-Lorente ◽  
Pei Wang ◽  
Markus Sieger ◽  
Ernesto Vargas Catalan ◽  
Mikael Karlsson ◽  
...  

Nanophotonics ◽  
2014 ◽  
Vol 3 (4-5) ◽  
pp. 329-341 ◽  
Author(s):  
Raji Shankar ◽  
Marko Lončar

AbstractThe mid-infrared (IR) wavelength region (2–20 µm) is of great interest for a number of applications, including trace gas sensing, thermal imaging, and free-space communications. Recently, there has been significant progress in developing a mid-IR photonics platform in Si, which is highly transparent in the mid-IR, due to the ease of fabrication and CMOS compatibility provided by the Si platform. Here, we discuss our group’s recent contributions to the field of silicon-based mid-IR photonics, including photonic crystal cavities in a Si membrane platform and grating-coupled high-quality factor ring resonators in a silicon-on-sapphire (SOS) platform. Since experimental characterization of microphotonic devices is especially challenging at the mid-IR, we also review our mid-IR characterization techniques in some detail. Additionally, pre- and post-processing techniques for improving device performance, such as resist reflow, Piranha clean/HF dip cycling, and annealing are discussed.


2002 ◽  
Vol 75 (4-5) ◽  
pp. 497-501 ◽  
Author(s):  
S. Sogaard ◽  
J. Henningsen
Keyword(s):  

2017 ◽  
Vol 111 (9) ◽  
pp. 091902 ◽  
Author(s):  
B.-U. Sohn ◽  
C. Monmeyran ◽  
L. C. Kimerling ◽  
A. M. Agarwal ◽  
D. T. H. Tan

2020 ◽  
Vol 10 (18) ◽  
pp. 6504
Author(s):  
Irati Jáuregui-López ◽  
Bakhtiyar Orazbayev ◽  
Victor Pacheco-Peña ◽  
Miguel Beruete

The high electric field intensity achieved on the surface of sensors based on metasurfaces (metasensors) makes them an excellent alternative for sensing applications where the volume of the sample to be identified is tiny (for instance, thin-film sensing devices). Various shapes and geometries have been proposed recently for the design of these metasensors unit-cells (meta-atoms) such as split ring resonators or hole arrays, among others. In this paper, we propose, design, and evaluate two types of tripod metasurfaces with different complexity in their geometry. An in-depth comparison of their performance is presented when using them as thin-film sensor devices. The meta-atoms of the proposed metasensors consist of a simple tripod and a hollow tripod structure. From numerical calculations, it is shown that the best geometry to perform thin-film sensing is the compact hollow tripod (due to the highest electric field on its surface) with a mean sensitivity of 3.72 × 10−5 nm−1. Different modifications are made to this structure to improve this value, such as introducing arms in the design and rotating the metallic pattern 30 degrees. The best sensitivity achieved for extremely thin film analytes (5–25 nm thick) has an average value of 1.42 × 10−4 nm, which translates into an extremely high improvement of 381% with respect to the initial hollow tripod structure. Finally, a comparison with other designs found in the literature shows that our design is at the top of the ranking, improving the overall performance by more than one order of magnitude. These results highlight the importance of using metastructures with more complex geometries so that a higher electric field intensity distribution and, therefore, designs with better performance can be obtained.


2008 ◽  
Vol 679 (1) ◽  
pp. 71-75 ◽  
Author(s):  
Wendy L. Freedman ◽  
Barry F. Madore ◽  
Jane Rigby ◽  
S. E. Persson ◽  
Laura Sturch

Nano Letters ◽  
2019 ◽  
Vol 19 (3) ◽  
pp. 1488-1493 ◽  
Author(s):  
Chen Chen ◽  
Feng Chen ◽  
Xiaolong Chen ◽  
Bingchen Deng ◽  
Brendan Eng ◽  
...  

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