DFT-FDTD modeling of a new broadband mid-infrared IGZO thin-film phototransistor based on black phosphorus capping layer incorporating intermediate metallic film

2022 ◽  
Vol 162 ◽  
pp. 110528
Author(s):  
S.E. Farah ◽  
Z. Dibi ◽  
H. Ferhati ◽  
F. Djeffal
Keyword(s):  
Thin Film ◽  
Black Phosphorus ◽  
Metallic Film ◽  
Mid Infrared ◽  
Capping Layer

Bright Mid-Infrared Photoluminescence from Thin-Film Black Phosphorus

Nano Letters ◽  
2019 ◽  
Vol 19 (3) ◽  
pp. 1488-1493 ◽  
Author(s):  
Chen Chen ◽  
Feng Chen ◽  
Xiaolong Chen ◽  
Bingchen Deng ◽  
Brendan Eng ◽  
...  
Keyword(s):  
Thin Film ◽  
Black Phosphorus ◽  
Mid Infrared

scholarly journals Widely tunable mid-infrared light emission in thin-film black phosphorus

2020 ◽  
Vol 6 (7) ◽  
pp. eaay6134 ◽  
Author(s):  
Chen Chen ◽  
Xiaobo Lu ◽  
Bingchen Deng ◽  
Xiaolong Chen ◽  
Qiushi Guo ◽  
...  
Keyword(s):  
Thin Film ◽  
Radiative Decay ◽  
Light Emission ◽  
Hexagonal Boron Nitride ◽  
Bias Field ◽  
Black Phosphorus ◽  
Infrared Light ◽  
Mid Infrared ◽  
Light Emitting ◽  
Decay Channels

Thin-film black phosphorus (BP) is an attractive material for mid-infrared optoelectronic applications because of its layered nature and a moderate bandgap of around 300 meV. Previous photoconduction demonstrations show that a vertical electric field can effectively reduce the bandgap of thin-film BP, expanding the device operational wavelength range in mid-infrared. Here, we report the widely tunable mid-infrared light emission from a hexagonal boron nitride (hBN)/BP/hBN heterostructure device. With a moderate displacement field up to 0.48 V/nm, the photoluminescence (PL) peak from a ~20-layer BP flake is continuously tuned from 3.7 to 7.7 μm, spanning 4 μm in mid-infrared. The PL emission remains perfectly linear-polarized along the armchair direction regardless of the bias field. Moreover, together with theoretical analysis, we show that the radiative decay probably dominates over other nonradiative decay channels in the PL experiments. Our results reveal the great potential of thin-film BP in future widely tunable, mid-infrared light-emitting and lasing applications.

scholarly journals Mid-infrared ultrafast carrier dynamics in thin film black phosphorus

2D Materials ◽  
2017 ◽  
Vol 4 (2) ◽  
pp. 021032 ◽  
Author(s):  
Vasudevan Iyer ◽  
Peide Ye ◽  
Xianfan Xu
Keyword(s):  
Thin Film ◽  
Carrier Dynamics ◽  
Black Phosphorus ◽  
Mid Infrared ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier

Mid-infrared light-emitting properties and devices based on thin-film black phosphorus

2020 ◽  
Author(s):  
Xinrong Zong ◽  
Kan Liao ◽  
Le Zhang ◽  
Chao Zhu ◽  
Xiaohong Jiang ◽  
...  
Keyword(s):  
Thin Film ◽  
Environmental Monitoring ◽  
Medical Treatment ◽  
Layered Material ◽  
Black Phosphorus ◽  
Infrared Light ◽  
Mid Infrared ◽  
Light Emitting ◽  
Wide Range ◽  
High Carrier

Mid-infrared (MIR) radiation has a wide range of applications in military, environmental monitoring, and medical treatment. Black phosphorus (BP), an emerging van der Waals (vdW) layered material, shows high carrier...

scholarly journals Mid-infrared thin-film diamond waveguides combined with tunable quantum cascade lasers for analyzing the secondary structure of proteins

2016 ◽  
Vol 213 (8) ◽  
pp. 2117-2123 ◽  
Author(s):  
Ángela I. López-Lorente ◽  
Pei Wang ◽  
Markus Sieger ◽  
Ernesto Vargas Catalan ◽  
Mikael Karlsson ◽  
...  
Keyword(s):  
Thin Film ◽  
Secondary Structure ◽  
Quantum Cascade Lasers ◽  
Mid Infrared ◽  
Quantum Cascade ◽  
Secondary Structure Of Proteins ◽  
Cascade Lasers ◽  
Structure Of Proteins

scholarly journals Mid-infrared time-resolved photoconduction in black phosphorus

2D Materials ◽  
2016 ◽  
Vol 3 (4) ◽  
pp. 041006 ◽  
Author(s):  
Ryan J Suess ◽  
Edward Leong ◽  
Joseph L Garrett ◽  
Tong Zhou ◽  
Reza Salem ◽  
...  
Keyword(s):  
Black Phosphorus ◽  
Time Resolved ◽  
Mid Infrared

Mobility improvement of LTPS thin film transistor using stacked capping layer

2021 ◽  
pp. 111591
Author(s):  
Taeyong Kim ◽  
Donggi Shin ◽  
Jinsu Park ◽  
Duy Phong Pham ◽  
Junsin Yi
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Capping Layer

scholarly journals Electrical Performance and Stability Improvement of p-Channel SnO Thin-Film Transistors Using Atomic-Layer-Deposited Al₂O₃ Capping Layer

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 222410-222416
Author(s):  
Kang-Hwan Bae ◽  
Min Gyu Shin ◽  
Seong-Hyun Hwang ◽  
Hwan-Seok Jeong ◽  
Dae-Hwan Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Capping Layer
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