Interface dipole for remarkable efficiency enhancement in all-solution-processable transparent inverted quantum dot light-emitting diodes

We report our efforts to develop high performing all-solution-processable transparent inverted QD-LEDs by interposing an interface dipole between the ZnO ETL and the quantum dot light-emitting layer.

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A solution-processable inorganic hole injection layer that improves the performance of quantum-dot light-emitting diodes

Current Applied Physics ◽

10.1016/j.cap.2016.12.024 ◽

2017 ◽

Vol 17 (4) ◽

pp. 442-447 ◽

Cited By ~ 18

Author(s):

Sang Moo Lee ◽

Dongguen Shin ◽

Nam-Kwang Cho ◽

Yeonjin Yi ◽

Seong Jun Kang

Keyword(s):

Quantum Dot ◽

Light Emitting Diodes ◽

Hole Injection ◽

Light Emitting ◽

Hole Injection Layer ◽

Solution Processable

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Low-cost, large-scale, ordered ZnO nanopillar arrays for light extraction efficiency enhancement in quantum dot light-emitting diodes

2014 IEEE Photonics Conference ◽

10.1109/ipcon.2014.6995486 ◽

2014 ◽

Author(s):

Xuyong Yang ◽

Kapil Dev ◽

Jianxiong Wang ◽

Evren Mutlugun ◽

Cuong Dang ◽

...

Keyword(s):

Quantum Dot ◽

Large Scale ◽

Light Emitting Diodes ◽

Extraction Efficiency ◽

Low Cost ◽

Light Extraction ◽

Light Extraction Efficiency ◽

Efficiency Enhancement ◽

Light Emitting ◽

Nanopillar Arrays

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Copper Indium Disulfide Quantum Dot Light Emitting Diodes for Display and Lighting Technologies

UF Journal of Undergraduate Research ◽

10.32473/ufjur.v20i3.106240 ◽

2019 ◽

Vol 20 (3) ◽

Author(s):

Stefano Barba

Keyword(s):

Reaction Time ◽

Quantum Dot ◽

Large Scale ◽

Light Emitting Diodes ◽

Device Fabrication ◽

Device Structure ◽

Light Emitting ◽

High Performing ◽

Copper Indium Disulfide ◽

Copper Indium

While significant advances in the development of quantum dot light emitting diodes (QLEDs) have been reported, these devices are primarily based on cadmium chalcogenide quantum dot (QD) materials. Both environmental and health concerns arise due to the toxicity of cadmium and consequently, alternative less toxic QDs must be developed for large scale QLED applications such as display and solid state lighting technologies. In this work, copper indium disulfide (CIS) was investigated as an alternative QD material for QLED applications. Through experimentation with material synthesis and device fabrication, this project aimed to develop high performing CIS QLEDs. Several synthetic approaches were experimented with and it was determined that the injection of shorter chain 1-octanethoil as sulfur precursor with extensive shell reaction time resulted in highly luminescent QDs. Single color QLEDs were fabricated based on typical device structure, using highly luminescent synthesized CIS QDs as the emissive layer in multilayer devices. Varying the shell reaction time of QDs in order to vary shell thickness resulted in significant differences in device performance. Using thicker shell QDs, high performing devices were obtained with the best performing QLEDs displaying a high peak current efficiency of 14.7 cd/A and high external quantum efficiency of 5.2%.

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