Efficiency Enhancement of All‐Solution‐Processed Inverted‐Structure Green Quantum Dot Light‐Emitting Diodes Via Partial Ligand Exchange with Thiophenol Derivatives Having Negative Dipole Moment

2019 ◽  
Vol 8 (1) ◽  
pp. 1901314 ◽  
Author(s):  
Hyungsuk Moon ◽  
Heeyeop Chae
Keyword(s):  
Dipole Moment ◽  
Quantum Dot ◽  
Ligand Exchange ◽  
Light Emitting Diodes ◽  
Efficiency Enhancement ◽  
Inverted Structure ◽  
Solution Processed ◽  
Light Emitting

P‐113: Efficiency Enhancement of Quantum dot Light‐Emitting Diodes Via Ligand Exchange

2021 ◽  
Vol 52 (1) ◽  
pp. 1308-1311
Author(s):  
Haowei Wang ◽  
Wenhai Mei ◽  
Zhenqi Zhang ◽  
Xiaoyuan Zhang ◽  
Zhigao Lu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Ligand Exchange ◽  
Light Emitting Diodes ◽  
Efficiency Enhancement ◽  
Light Emitting

High performance, top-emitting, quantum dot light-emitting diodes with all solution-processed functional layers

2017 ◽  
Vol 5 (35) ◽  
pp. 9138-9145 ◽  
Author(s):  
Zhaobing Tang ◽  
Jie Lin ◽  
Lishuang Wang ◽  
Ying Lv ◽  
Yongsheng Hu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Solution Process ◽  
Solution Processed ◽  
Light Emitting

High performance top-emitting green quantum dot light-emitting diodes have been developed based on an all-solution process and with a bottom Al anode.

Improved Brightness and Color Tunability of Solution-Processed Silicon Quantum Dot Light-Emitting Diodes

2020 ◽  
Vol 124 (42) ◽  
pp. 23333-23342
Author(s):  
Hiroyuki Yamada ◽  
Noriyuki Saitoh ◽  
Batu Ghosh ◽  
Yoshitake Masuda ◽  
Noriko Yoshizawa ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Solution Processed ◽  
Light Emitting ◽  
Silicon Quantum Dot ◽  
Color Tunability

scholarly journals Low-temperature solution-processed MoOx as hole injection layer for efficient quantum dot light-emitting diodes

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27464-27472 ◽  
Author(s):  
Jingling Li ◽  
Qiling Guo ◽  
Hu Jin ◽  
Kelai Wang ◽  
Dehua Xu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Temperature Solution

In this work, quantum dot light-emitting diodes (QD-LEDs) based on a low-temperature solution-processed MoOx hole injection layer were fabricated.

scholarly journals Solution-processed double-layered hole transport layers for highly-efficient cadmium-free quantum-dot light-emitting diodes

2020 ◽  
Vol 28 (5) ◽  
pp. 6134 ◽  
Author(s):  
Fei Chen ◽  
Li-Jin Wang ◽  
Xu Li ◽  
Zhen-Bo Deng ◽  
Feng Teng ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Solution Processed ◽  
Light Emitting ◽  
Highly Efficient ◽  
Hole Transport Layers

scholarly journals Optical Patterning: Direct Optical Patterning of Quantum Dot Light‐Emitting Diodes via In Situ Ligand Exchange (Adv. Mater. 46/2020)

2020 ◽  
Vol 32 (46) ◽  
pp. 2070346
Author(s):  
Himchan Cho ◽  
Jia‐Ahn Pan ◽  
Haoqi Wu ◽  
Xinzheng Lan ◽  
Igor Coropceanu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Ligand Exchange ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Optical Patterning

scholarly journals Correlation between the Morphology of ZnO Layers and the Electroluminescence of Quantum Dot Light-Emitting Diodes

2019 ◽  
Vol 9 (21) ◽  
pp. 4539 ◽  
Author(s):  
Seongkeun Oh ◽  
Jiwan Kim
Keyword(s):  
Quantum Dot ◽  
Spin Coating ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Coating Process ◽  
Inverted Structure ◽  
Light Emitting ◽  
Spin Coating Process ◽  
Ito Glass

The present work shows the effect of the ZnO layer morphology on inverted quantum dot light-emitting diodes (QLEDs) using different spin-coating processes. In the inverted structure of ITO/ZnO/QDs/CBP/MoO3/Al, ZnO nanoparticles were used as the electron transport layer. The utilization of a two-step spin-coating process to deposit a ZnO layer on a patterned ITO glass substrate resulted in an increase in the surface roughness of the ZnO layer and a decrease in the luminance of the QLEDs. However, the current efficiency of the device was enhanced by more than two-fold due to the reduced current density. Optimization of the ZnO spin-coating process can efficiently improve the optical and electrical properties of QLEDs.

Sign in / Sign up

Export Citation Format

Share Document