Synthesis, optical properties and application of Y7O6F9:Er3+ for sensing the chip temperature of a light emitting diode

2018 ◽  
Vol 6 (48) ◽  
pp. 13352-13358 ◽  
Author(s):  
Deyin Wang ◽  
Pengpeng Zhang ◽  
Qiang Ma ◽  
Jiachi Zhang ◽  
Yuhua Wang
Keyword(s):  
Optical Properties ◽  
Light Emitting Diode ◽  
Precipitation Method ◽  
Light Emitting ◽  
Chip Temperature ◽  
Uv Led ◽  
Co Precipitation

Submicron sized Y7O6F9:Er3+ was synthesized via a co-precipitation method and used to determine the chip temperature of a 1 W n-UV LED.

scholarly journals Preparation and photoluminescence study of Alumin o-boro silicate YAG fluorescent glass for White LED

2021 ◽  
Author(s):  
Chao Yang ◽  
Guohua Song ◽  
Jianwen Miao ◽  
Tingting Fan
Keyword(s):  
Light Emitting Diode ◽  
Emission Spectra ◽  
Precipitation Method ◽  
Excitation Spectra ◽  
Fluorescence Excitation ◽  
Light Emitting ◽  
White Leds ◽  
Near Ultraviolet ◽  
Fluorescence Excitation Spectra ◽  
Co Precipitation

Abstract The YAG: Eu 3+ fluorescent glass for NUV(near ultraviolet) white LEDs was obtained firstly by synthesizing Y 3 Al 5 O 12 (YAG): Eu 3+ precursors through a simple co-precipitation method, and then mixing precursor with B 2 O 3 -Al 2 O 3 -SiO 2 -Na 2 O-BaO glass powder calcined at 1400°C for 2.5 hours. The as-prepared YAG glass-ceramic phosphor was investigated by DTA, XRD, SEM, and photoluminescence (PL). Influence of YAG: Eu 3+ precursor and Eu 3+ doping on excitation and emission spectra also have been studied. The results show that: the phosphor's emission peak located at 393nm is correspond to the 7 F 0 - 5 L 6 transition of Eu 3+ ions, which matches good with UV LED chips; the phosphor gives intense emission at 593nm originating from the 5 D 0 - 7 F 1 transition of Eu 3+ ions. When the YAG precursor is 0.9g and amount of Eu 3+ doped is 0.08, the fluorescence excitation spectra of glass and emission spectra of the peak intensity reach its maximum value. The YAG: Eu 3+ fluorescence glass could be a promising material for the production of near ultraviolet chip white light-emitting diode.

scholarly journals Design of a Secondary Freeform Lens of UV LED Mosquito-Trapping Lamp for Enhancing Trapping Efficiency

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 335 ◽  
Author(s):  
Wei-Hsiung Tseng ◽  
Diana Juan ◽  
Wei-Cheng Hsiao ◽  
Cheng-Han Chan ◽  
Hsin-Yi Ma ◽  
...  
Keyword(s):  
Light Intensity ◽  
Intensity Distribution ◽  
Light Emitting Diode ◽  
Trapping Efficiency ◽  
Axially Symmetric ◽  
Light Intensity Distribution ◽  
Light Emitting ◽  
Led Light ◽  
Uv Led ◽  
Freeform Lens

In this study, our proposed ultraviolet light-emitting diode (UV LED) mosquito-trapping lamp is designed to control diseases brought by insects such as mosquitoes. In order to enable the device to efficiently catch mosquitoes in a wider area, a secondary freeform lens (SFL) is designed for UV LED. The lens is mounted on a 3 W UV LED light bar as a mosquito-trapping lamp of the new UV LED light bar module to achieve axially symmetric light intensity distribution. The special SFL is used to enhance the trapping capabilities of the mosquito-trapping lamp. The results show that when the secondary freeform surface lens is applied to the experimental outdoor UV LED mosquito-trapping lamp, the trapping range can be expanded to 100π·m2 and the captured mosquitoes increased by about 300%.

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

2007 ◽  
Vol 17 (01) ◽  
pp. 81-84
Author(s):  
J. Senawiratne ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Xia ◽  
Y. Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Stark Effect ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Green Emission ◽  
Luminescence Spectroscopy ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Multi Quantum Well

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.

Synthesis of mesoporous Fe-Mn bimetal oxide nanocomposite by aeration co-precipitation method: Physicochemical, structural, and optical properties

2019 ◽  
Vol 224 ◽  
pp. 65-72 ◽  
Author(s):  
Hadi Eslami ◽  
Mohammad Hassan Ehrampoush ◽  
Abbas Esmaeili ◽  
Ali Asghar Ebrahimi ◽  
Mohammad Taghi Ghaneian ◽  
...  
Keyword(s):  
Optical Properties ◽  
Precipitation Method ◽  
Structural And Optical Properties ◽  
Co Precipitation

Miniaturized UV-LED Array Chip Photochemical Vapor Generator Coupled with Point Discharge Optical Emission Spectrometer for Determination of Trace Selenium

2021 ◽  
Author(s):  
Mengtian Li ◽  
Yi Luo ◽  
Zhirong Zou ◽  
Fujian Xu ◽  
Xiaoming Jiang ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Optical Emission ◽  
Nano Tio2 ◽  
Light Emitting ◽  
Uv Led ◽  
Led Array ◽  
Point Discharge ◽  
Photochemical Vapor Generation ◽  
Optical Emission Spectrometer

An ultraviolet light emitting diode (UV-LED) array chip as irradiation source for nano-TiO2 catalyzed photochemical vapor generation (PCVG) was combined with a hollow electrode point discharge microplasma optical emission spectrometer...

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