scholarly journals ZnAl2O4 decorated Al-doped ZnO tetrapodal 3D networks: microstructure, Raman and detailed temperature dependent photoluminescence analysis

2020 ◽  
Vol 2 (5) ◽  
pp. 2114-2126 ◽  
Author(s):  
Joana Rodrigues ◽  
Matthias Hoppe ◽  
Nabiha Ben Sedrine ◽  
Niklas Wolff ◽  
Viola Duppel ◽  
...  
Keyword(s):  
Peak Position ◽  
Temperature Dependent ◽  
Al Doping ◽  
3D Network ◽  
Doped Zno ◽  
3D Networks ◽  
Moss Effect ◽  
Temperature Dependent Photoluminescence

3D network of ZnO:Al tetrapods decorated with ZnAl2O4 particles were synthesised by FTS. Al-doping was confirmed by the broadening and shift of the peak position of the 14 K NBE emission and by the bandgap shift to higher energy due to a Burstein–Moss effect.

Temperature-Dependent Photoluminescence Spectra of PbSe Quantum Dots for Temperature Markers

2012 ◽  
Vol 482-484 ◽  
pp. 2547-2550
Author(s):  
Peng Fei Gu ◽  
Ya Nan Wang ◽  
Jia Jia Cao ◽  
Yu Yan ◽  
Tie Qiang Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Temperature Sensitivity ◽  
Peak Position ◽  
Strong Temperature Dependence ◽  
Photoluminescence Spectra ◽  
Temperature Dependent ◽  
Temperature Variations ◽  
Temperature Changes ◽  
Optical Readout ◽  
Temperature Dependent Photoluminescence

We here report the temperature effect on photoluminescence(PL) spectra of PbSe quantum dots (QDs), which exhibit a strong temperature dependence on their spectra position and intensity. They potentially act as the temperature marker, sensing temperature variations and reporting temperature changes remotely through optical readout. In addition, the temperature sensitivity characterized by peak position of PbSe QDs was found to be 0.39nm/°C in a range of 10-100 °C.

scholarly journals Temperature-dependent Photoluminescence of Boron-doped ZnO Nanorods

2013 ◽  
Vol 34 (11) ◽  
pp. 3335-3339 ◽  
Author(s):  
Soaram Kim ◽  
Hyunggil Park ◽  
Giwoong Nam ◽  
Hyunsik Yoon ◽  
Jong Su Kim ◽  
...  
Keyword(s):  
Zno Nanorods ◽  
Temperature Dependent ◽  
Boron Doped ◽  
Doped Zno ◽  
Temperature Dependent Photoluminescence

scholarly journals TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE STUDY OF POROUS GAP

2019 ◽  
Vol 57 (3A) ◽  
pp. 41
Author(s):  
Thuy Thi Pham
Keyword(s):  
Room Temperature ◽  
Bulk Material ◽  
Green Emission ◽  
Peak Position ◽  
Electrochemical Anodization ◽  
Temperature Dependent ◽  
Increasing Temperature ◽  
Band Gap Narrowing ◽  
532 Nm ◽  
Temperature Dependent Photoluminescence

This paper reports on the temperature-dependent photoluminescence of porous GaP under the 532-nm excitation. Porous GaP formed by electrochemical anodization of (111)-oriented bulk material exhibits green emission at 550 nm (2.25 eV) and red emission at 770 nm (1.65 eV) at room temperature. In the temperature range from 25 K to 275 K intensity from the green emission gradually decreases when the temperature increases. Additionally, peak position of the green luminescence band shifts to lower energy with increasing temperature and the same the GaP band gap narrowing with temperature. This means a contribution of lattice vibrations.

Temperature-dependent photoluminescence of quasialigned Al-doped ZnO nanorods

2007 ◽  
Vol 90 (2) ◽  
pp. 023104 ◽  
Author(s):  
H. P. He ◽  
H. P. Tang ◽  
Z. Z. Ye ◽  
L. P. Zhu ◽  
B. H. Zhao ◽  
...  
Keyword(s):  
Zno Nanorods ◽  
Temperature Dependent ◽  
Doped Zno ◽  
Temperature Dependent Photoluminescence

Combustion Synthesis and Temperature Dependent Photoluminescence of Nanocrystalline Y2Zr2O7: Eu3+

2009 ◽  
Vol 24 (2) ◽  
pp. 239-242 ◽  
Author(s):  
Dian-Yuan WANG ◽  
Qing-Kai WANG ◽  
Zhang-Yong CHANG ◽  
Yan-Yan GUO ◽  
Xing-Hua WU
Keyword(s):  
Combustion Synthesis ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence
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