scholarly journals Temperature-induced nanostructural evolution of hydrogen-rich voids in amorphous silicon: a first-principles study

Nanoscale ◽  
2020 ◽  
Vol 12 (3) ◽  
pp. 1464-1477
Author(s):  
Parthapratim Biswas ◽  
Durga Paudel ◽  
Raymond Atta-Fynn ◽  
Stephen R. Elliott

The paper presents an ab initio study of temperature-induced nanostructural evolution of hydrogen-rich voids in amorphous silicon.

2018 ◽  
Vol 20 (28) ◽  
pp. 19110-19119 ◽  
Author(s):  
María Pilar de Lara-Castells ◽  
Carlos Cabrillo ◽  
David A. Micha ◽  
Alexander O. Mitrushchenkov ◽  
Tijo Vazhappilly

This first-principles study reveals how stable subnanometer silver clusters on a TiO2(110) surface lead to the onset of absorption bands in the near-infrared and visible regions.


RSC Advances ◽  
2017 ◽  
Vol 7 (8) ◽  
pp. 4697-4703 ◽  
Author(s):  
Shuyin Yu ◽  
Qingfeng Zeng ◽  
Artem R. Oganov ◽  
Gilles Frapper ◽  
Bowen Huang ◽  
...  

Using a variable-composition ab initio evolutionary algorithm, we investigate stability of various Zr–N compounds.


Author(s):  
Ruslan M Meftakhutdinov ◽  
Renat Timergalievich Sibatov ◽  
Dmitry A Evseev ◽  
Aleksey Kochaev

New van der Waals (vdW) heterostructures obtained by stacking monolayers of recently synthesized graphenylene (Gr) and two-dimensional 1H-MoX$_{2}$ (X=S, Te, Se) are proposed and analyzed using ab initio calculations. These...


2008 ◽  
Vol 1070 ◽  
Author(s):  
Iván Santos ◽  
Wolfgang Windl ◽  
Lourdes Pelaz ◽  
Luis Alberto Marqués

ABSTRACTWe have carried out an ab initio simulation study of boron in amorphous silicon. In order to understand the possible structural environments of B atoms, we have studied substitutional-like (replacing one Si atom in the amorphous cell by a B atom) and interstitial-like (adding a B atom into an interstitial space) initial configurations. We have evaluated the Fermi-level dependent formation energy of the neutral and charged (±1) configurations and the chemical potential for the neutral ones. For the interstitial-like boron atom, we have find an averaged formation energy of 1.5 eV. For the substitutional case, we have found a dependence of the chemical potential on the distance to Si neighbors, which does not appear for the interstitial ones. From MD simulations, we could observe a diffusion event for an interstitial-like boron atom with a migration barrier of 0.6 eV.


RSC Advances ◽  
2020 ◽  
Vol 10 (44) ◽  
pp. 26579-26587
Author(s):  
Xueke Yu ◽  
Xue Jiang ◽  
Yan Su ◽  
Jijun Zhao

We performed systematic ab initio calculations to explore the structures and electronic properties of ammonia ice by hydrostatic compression.


2019 ◽  
Vol 21 (11) ◽  
pp. 6224-6228 ◽  
Author(s):  
Jiabo Chen ◽  
Jiaduo Zhu ◽  
Jing Ning ◽  
Xiaoling Duan ◽  
Dong Wang ◽  
...  

Ab initio calculations were performed to investigate the chemical oxidation of two-dimensional (2D) gallium nitride (GaN).


2020 ◽  
Vol 536 ◽  
pp. 119995
Author(s):  
Ayşegül Özlem Çetin Karacaoğlan ◽  
Murat Durandurdu

2011 ◽  
Vol 50 (16) ◽  
pp. 7460-7477 ◽  
Author(s):  
Mihail Atanasov ◽  
Dmitry Ganyushin ◽  
Dimitrios A. Pantazis ◽  
Kantharuban Sivalingam ◽  
Frank Neese

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