Temperature-induced nanostructural evolution of hydrogen-rich voids in amorphous silicon: a first-principles study
The paper presents an ab initio study of temperature-induced nanostructural evolution of hydrogen-rich voids in amorphous silicon.
2018 ◽
Vol 20
(28)
◽
pp. 19110-19119
◽
Keyword(s):
Keyword(s):
2019 ◽
Vol 21
(11)
◽
pp. 6224-6228
◽
Keyword(s):
2018 ◽
Vol 98
(30)
◽
pp. 2723-2733
◽
2017 ◽
Vol 473
◽
pp. 64-73
◽