Interfacial electronic structure between a W-doped In2O3 transparent electrode and a V2O5 hole injection layer for inorganic quantum-dot light-emitting diodes
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Interfacial electronic structure between W-doped In2O3 and V2O5 has been investigated, and we found gap states that can provide an efficient hole carrier injection pathway.
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2019 ◽
Vol 216
(11)
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pp. 1900004
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2017 ◽
Vol 17
(4)
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pp. 442-447
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2018 ◽
Vol 215
(23)
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pp. 1800517
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